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FMMT495Q PDF预览

FMMT495Q

更新时间: 2023-09-24 09:17:42
品牌 Logo 应用领域
美台 - DIODES 小信号双极晶体管
页数 文件大小 规格书
2页 117K
描述
NPN, 150V, 1A, SOT23

FMMT495Q 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.25Is Samacsys:N
最大集电极电流 (IC):1 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzVCEsat-Max:0.3 V
Base Number Matches:1

FMMT495Q 数据手册

 浏览型号FMMT495Q的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR MEDIUM  
FMMT495  
POWER HIGH PERFORMANCE TRANSISTOR  
ISSUE 3 - NOVEMBER 1995  
PARTMARKING DETAIL –  
495  
E
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
170  
Collector-Emitter Voltage  
150  
V
Emitter-Base Voltage  
5
V
Continuous Collector Current  
Peak Pulse Current  
1
2
A
ICM  
A
Base Current  
IB  
200  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Ptot  
500  
Tj:Tstg  
= 25°C).  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
VCEO(sus)  
V(BR)EBO  
ICBO  
170  
150  
5
V
IC=100µA  
IC=10mA*  
IE=100µA  
VCB=150V  
VCE=150V  
VEB=4V  
V
V
Collector Cut-Off Currents  
Emitter Cut-Off Current  
100  
100  
100  
nA  
nA  
nA  
ICES  
IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
0.2  
0.3  
V
V
IC=250mA, IB=25mA*  
IC=500mA, IB=50mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
1.0  
V
IC=500mA, IB=50mA*  
Base-Emitter  
Turn On Voltage  
1.0  
V
IC=500mA, VCE=10V*  
Static Forward Current  
Transfer Ratio  
100  
100  
50  
IC=1mA, VCE=10V  
IC=250mA, VCE=10V*  
IC=500mA, VCE=10V*  
IC=1A, VCE=10V*  
300  
10  
10  
Transition Frequency  
fT  
100  
MHz  
pF  
IC=50mA, VCE=10V  
f=100MHz  
Collector-Base  
Breakdown Voltage  
Cobo  
VCB=10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3 - 123  

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