FMMT497

更新时间： 2024-02-21 04:56:07

品牌	Logo	应用领域
捷特科 - ZETEX		晶体小信号双极晶体管光电二极管高压局域网
页数	文件大小	规格书
2页	121K
描述
NPN SILICON PLANAR HIGH VOLTAGE HIGH PERFORMANCE TRANSISTOR

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技术参数
数据手册

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FMMT497 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.77
Base Number Matches：	1

FMMT497 数据手册

SOT23 NPN SILICON PLANAR HIGH VOLTAGE

HIGH PERFORMANCE TRANSISTOR

FMMT497

ISSUE 3 DECEMBER 1995

COMPLIMENTARY TYPE

PARTMARKING DETAIL

✪

FMMT597

497

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

300

Collector-Emitter Voltage

300

Emitter-Base Voltage

500

Continuous Collector Current

Peak Pulse Current

I_CM

Base Current

I_B

200

°C

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

500

T_j:T_stg

= 25°C).

-55 to +150

amb

PARAMETER

SYMBOL

V_(BR)CBO

MIN.

300

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter

Breakdown Voltage

V_CEO(sus)

V_(BR)EBO

300

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

100

V_CB=250V

V_CES=250V

V_EB=4V

I_CES

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

0.2

0.3

I_C=100mA, I_B=10mA

I_C=250mA, I_B=25mA

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

1.0

I_C=250mA, I_B=25mA

Base-Emitter

Turn On Voltage

1.0

I_C=250mA, V_CE=10V

Static Forward Current

Transfer Ratio

100

I_C=1mA, V_CE=10V

I_C=100mA, V_CE=10V*

I_C=250mA, V_CE=10V*

300

Transition Frequency

f_T

MHz

I_C=50mA, V_CE=10V

f=100MHz

Collector-Base

Breakdown Voltage

C_obo

V_CB=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 125

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