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FMMT5088 PDF预览

FMMT5088

更新时间: 2024-09-23 04:18:43
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
1页 31K
描述
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

FMMT5088 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.4最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):300JESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz

FMMT5088 数据手册

  
SOT23 NPN SILICON PLANAR  
FMMT5088  
FMMT5089  
SMALL SIGNAL TRANSISTORS  
ISSUE 2 - SEPTEMBER 1995  
PARTMARKING DETAIL—  
FMMT5088 - 1Q  
FMMT5089 - 1R  
E
C
COMPLEMENTARY TYPES — FMMT5088 - FMMT5087  
FMMT5089 - None Available  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
FMMT5088 FMMT5089  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
35  
30  
30  
25  
V
4.5  
50  
4.5  
50  
V
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
mA  
mW  
°C  
Ptot  
330  
330  
Operating and Storage Temperature Range Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
amb  
= 25°C).  
FMMT5088  
FMMT5089  
PARAMETER  
SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
ICBO  
35  
30  
25  
30  
V
V
IC=1mA, IB=0  
Collector-Emitter  
Breakdown Voltage  
IC=100µA,IE=0*  
Collector- Base  
Cut-Off Current  
50  
50  
0.5  
nA  
nA  
VCB=20V, IE=0  
VCB=15V, IE=0  
50  
Emitter-Base Current IEBO  
nA  
nA  
VEB(off)=3V, IC=0  
VEB(off)=4.5V, IC=0  
100  
0.5  
Emitter Saturation  
Voltages  
VCE(sat)  
V
V
IC=10mA, IB=1mA  
VBE(sat)  
hFE  
0.8  
0.8  
Static Forward  
Current Transfer  
Ratio  
300  
350  
300  
900  
400  
450  
400  
1200  
IC=100µA, VCE=5V  
IC=1mA, VCE=5V  
IC=10mA, VCE=5V  
Transition  
Frequency  
fT  
50  
50  
MHz  
IC=500µA, VCE=5V  
f=20MHz  
Output Capacitance  
Cobo  
Cebo  
4
4
pF  
pF  
VCB=5V, f=1MHz, IE=0  
Emitter-base  
Capacitance  
10  
10  
VBE=0.5V, f=1MHz,  
IC=0  
Noise Figure  
N
3
2
dB  
IC=200mA, VCE=5V,  
Rg=10K, f=10Hz to  
15KHz  
Small Signal Current hfe  
Transfer Ratio  
350  
1400 450  
1800  
IC=1mA, VCE=5V  
f=1KHz ++  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% ++ Periodic Sample test Only  
Spice parameter data is available upon request for this device  
Page Number  

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