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FMMT5088 PDF预览

FMMT5088

更新时间: 2024-11-17 06:59:43
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 35K
描述
Small Signal Transistor

FMMT5088 数据手册

  
SMD Type  
Transistors  
Small Signal Transistor  
FMMT5088  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
Features  
3
Small signal transistor.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
35  
30  
Collector-emitter voltage  
Emitter-base voltage  
V
4.5  
V
Collector current  
50  
mA  
mW  
Power dissipation  
Ptot  
330  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
IC=1mA, IB=0  
Min  
35  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage *  
Collector-base cut-off current  
Emitter-base current  
V(BR)CBO  
V(BR)CEO  
ICBO  
30  
V
IC=100mA,IE=0*  
VCB=20V, IE=0  
50  
50  
nA  
nA  
V
IEBO  
VEB(off)=3V, IC=0  
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
DC current gain  
VCE(sat)  
VBE(sat)  
hFE  
0.5  
0.8  
900  
V
300  
50  
IC=100ìA, VCE=5V  
Current-gain-bandwidth product  
Output capacitance  
fT  
IC=500mA, VCE=5V f=20MHz  
MHz  
pF  
Cobo  
4
VCB=5V, f=1MHz, IE=0  
VBE=0.5V, f=1MHz, IC=0  
Emitter-base capacitance  
Cebo  
10  
pF  
IC=200mA, VCE=5V,  
Noise figure  
NF  
hfe  
3
dB  
ns  
Rg=10KÙ, f=10Hz to 15KHz  
Small signal current transfer ratio  
IC=1mA, VCE=5V f=1KHz  
350  
1400  
* Pulse test: tp  
300 ìs; d  
0.02.  
Marking  
Marking  
1Q  
1
www.kexin.com.cn  

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