Datasheet > FMMT5089

FMMT5089

更新时间： 2024-09-23 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	58K
描述
Small signal transistor

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中文翻译

获取价格

数据手册

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FMMT5089 数据手册

Product specification

FMMT5089

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Small signal transistor.

+0.1

0.95

-0.1

+0.05

-0.01

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

4.5

Collector current

Power dissipation

P^tot

330

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^C=1mA, I^B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Collector-base cut-off current

Emitter-base current

V^(BR)CBO

V^(BR)CEO

I^CBO

I^C=100mA,I^E=0*

V^CB=15V, I^E=0

100

0.5

I^EBO

V^EB(off)=4.5V, I^C=0

I^C=10mA, I^B=1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current gain

V^CE(sat)

V^BE(sat)

h^FE

0.8

400

1200

IC=100ìA, VCE=5V

Current-gain-bandwidth product

Output capacitance

f^T

I^C=500mA, V^CE=5V f=20MHz

MHz

C^obo

V^CB=5V, f=1MHz, I^E=0

V^BE=0.5V, f=1MHz, I^C=0

Emitter-base capacitance

C^ebo

I^C=200mA, V^CE=5V,

Noise figure

hfe

R^g=10KÙ, f=10Hz to 15KHz

Small signal current transfer ratio

I^C=1mA, V^CE=5V f=1KHz

450

1800

* Pulse test: tp

300 ìs; d

0.02.

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

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