Datasheet > FMMT5087R-3M

FMMT5087R-3M

更新时间： 2024-09-23 04:18:43

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
1页	30K
描述
SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR

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中文翻译

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数据手册

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FMMT5087R-3M 数据手册

SOT23 PNP SILICON PLANAR

SMALL SIGNAL TRANSISTOR

FMMT5087

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

FMMT5087 - 2m

FMMT5087R - 3m

FMMT5088

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-3

Continuous Collector Current

Power Dissipation at T_amb=25°C

-100

°C

P_tot

330

Operating and Storage Temperature Range T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

I_CBO

MAX.

UNIT

CONDITIONS.

Collector-Base

Cut-Off Current

-10

-50

µA

V_CB=-10V, I_E=0

V_CB=-35V, I_E=0

Emitter-Base Current I_EBO

-50

V_EB=-3V, I_C=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(on)

h_FE

-300 mV

-850 mV

800

I_C=-10mA, I_B=-1mA

Base-Emitter

ON Voltage

IC=-1mA, V_CE=-5V

Static Forward

Current Transfer

Ratio

250

I_C=-100µA, V_CE=-5V

I_C=-1mA, V_CE=-5V

I_C=-10mA, V_CE=-5V*

Transition

Frequency

f_T

MHz

I_C=-500µA, V_CE=-5V f=20MHz

Small Signal Current h_fe

Transfer Ratio

250

900

I_C=-1mA, V_CE=-5V f=1KHz

Noise Figure

I_C=200µA, V_CE=-5V, R_g=2KΩ

f=30Hz to 15KHz at 2dB

points

Output Capacitance

C_obo

V_CB=-5V, f=140MHz, I_E=0

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

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