Datasheet > FMMT5088-1Q

FMMT5088-1Q

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
1页	31K
描述
SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS

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数据手册

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FMMT5088-1Q 数据手册

SOT23 NPN SILICON PLANAR

FMMT5088

FMMT5089

SMALL SIGNAL TRANSISTORS

ISSUE 2 - SEPTEMBER 1995

PARTMARKING DETAIL

FMMT5088 - 1Q

FMMT5089 - 1R

COMPLEMENTARY TYPES FMMT5088 - FMMT5087

FMMT5089 - None Available

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMT5088 FMMT5089

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

4.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

°C

P_tot

330

Operating and Storage Temperature Range T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

FMMT5088

FMMT5089

PARAMETER

SYMBOL MIN. MAX. MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

I_CBO

I_C=1mA, I_B=0

Collector-Emitter

Breakdown Voltage

I_C=100µA,I_E=0*

Collector- Base

Cut-Off Current

0.5

V_CB=20V, I_E=0

V_CB=15V, I_E=0

Emitter-Base Current I_EBO

V_EB(off)=3V, I_C=0

V_EB(off)=4.5V, I_C=0

100

0.5

Emitter Saturation

Voltages

V_CE(sat)

I_C=10mA, I_B=1mA

V_BE(sat)

h_FE

0.8

Static Forward

Current Transfer

Ratio

300

350

300

900

400

450

400

1200

I_C=100µA, V_CE=5V

I_C=1mA, V_CE=5V

I_C=10mA, V_CE=5V

Transition

Frequency

f_T

MHz

I_C=500µA, V_CE=5V

f=20MHz

Output Capacitance

C_obo

C_ebo

V_CB=5V, f=1MHz, I_E=0

Emitter-base

Capacitance

V_BE=0.5V, f=1MHz,

I_C=0

Noise Figure

I_C=200mA, V_CE=5V,

R_g=10KΩ, f=10Hz to

15KHz

Small Signal Current h_fe

Transfer Ratio

350

1400 450

1800

I_C=1mA, V_CE=5V

f=1KHz ++

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% ++ Periodic Sample test Only

Spice parameter data is available upon request for this device

Page Number

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