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FMMT5179TC PDF预览

FMMT5179TC

更新时间: 2024-11-11 21:13:03
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
2页 92K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,

FMMT5179TC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.74
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):25
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最小功率增益 (Gp):15 dB认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):900 MHz
VCEsat-Max:0.4 VBase Number Matches:1

FMMT5179TC 数据手册

 浏览型号FMMT5179TC的Datasheet PDF文件第2页 
SOT23 NPN SILICON PLANAR  
HIGH FREQUENCY TRANSISTOR  
ISSUE 3 - JANUARY 1996  
FMMT5179  
FEATURES  
*
*
*
High fT=900MHz Min  
Max capacitance=1pF  
Low noise 4.5dB  
E
C
B
PARTMARKING DETAIL - 179  
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
Collector-Base Voltage  
20  
12  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
2.5  
V
Continuous Collector Current  
Power Dissipation  
50  
mA  
mW  
°C  
Ptot  
330  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
VCEO(SUS) 12  
MAX.  
UNIT CONDITIONS.  
Collector-Emitter Sustaining  
Voltage  
V
V
V
IC= 3mA, IB=0  
IC= 1µA, IE=0  
IE=10µA, IC=0  
Collector-Base Breakdown  
Voltage  
V(BR)CBO  
V(BR)EBO  
ICBO  
20  
Emitter-Base Breakdown  
Voltage  
2.5  
Collector Cut-Off  
Current  
0.02  
1.0  
V
CB=15V, IE=0  
µA  
µA  
VCB=15V, IE=0, Tamb=150°C  
Static Forward Current  
Transfer Ratio  
hFE  
25  
250  
0.4  
1.0  
IC=3mA, VCE=1V  
IC=10mA, IB=1mA  
IC=10mA, IB=1mA  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
VBE(sat)  
V
V
Base-Emitter  
Saturation Voltage  
Transition Frequency  
fT  
900  
2000  
1
MHz IC=5mA, VCE=6V, f=100MHz  
Collector-Base Capacitance  
Small Signal Current Gain  
Ccb  
hfe  
pF  
IE=0, VCB=10V, f=1MHz  
25  
3
300  
14  
IC=2mA, VCE=6V, f=1KHz  
IE=2mA, VCB=6V, f=31.9MHz  
Collector Base Time Constant rb’Cc  
ps  
Noise Figure  
NF  
4.5  
dB  
IC=1.5mA, VCE=6V  
RS=50, f=200MHz  
Common-Emitter Amplifier  
Power Gain  
Gpe  
15  
dB  
IC=5mA, VCE=6V  
f=200MHz  
Spice parameter data is available upon request for this device  
3 - 169  

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