Datasheet > FMMT5210

FMMT5210

更新时间： 2024-11-11 12:33:39

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TYSEMI		晶体晶体管
页数	文件大小	规格书
1页	58K
描述
Small signal transistor

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中文翻译

获取价格

数据手册

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FMMT5210 数据手册

Product specification

FMMT5209

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

Small signal transistor.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

4.5

Collector current

Power dissipation

P^tot

330

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

V^CB=35V, I^E=0

Min

Typ

Max

Unit

Collector-base cut-off current

Emitter-base current

V^EB=3V, I^C=0

Collector-emitter saturation voltage

Base-emitter ON voltage

DC current gain

V^CE(sat)

V^BE(on)

h^FE

700

850

300

I^C=10mA, I^B=1mA

I^C=1mA, V^CE=5V

100

I^C=100ìA, V^CE=5V

Current-gain-bandwidth product

Small signal current transfer ratio

f^T

I^C=0.5mA, V^CE=5V,f=20MHz

MHz

hfe

I^C=1mA, V^CE=5V, f=1KHz

150

600

I^C=200ìA, V^CE=5V, R^g=2KÙ,

f=30Hz to 15KHz at -3dB points

Noise figure

I^C=200ìA, V^CE=5V, R^g=2KÙ,

f=1KHz to f=200Hz

Output capacitance

C^obo

V^CB=5V, I^E=0, f=140KHz

Marking

http://www.twtysemi.com

1 of 1

sales@twtysemi.com

4008-318-123

中文翻译

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