FMMT549A

更新时间： 2024-11-11 10:34:51

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管局域网
页数	文件大小	规格书
2页	116K
描述
SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

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FMMT549A 数据手册

SOT23 PNP SILICON PLANAR

FMMT549

FMMT549A

MEDIUM POWER TRANSISTORS

✪

FEATURES

ISSUE 3 - OCTOBER 1995

Low equivalent on-resistance; R_CE(sat)250mΩ at 1A

1 Amp continuous current

COMPLEMENTARY TYPES FMMT549 - FMMT449

FMMT549A - N/A

PARTMARKING DETAIL

FMMT549 - 549

FMMT549A - 59A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-35

Collector-Emitter Voltage

-30

Emitter-Base Voltage

-5

-2

Peak Pulse Current

Continuous Collector Current

Base Current

I_C

-1

I_B

-200

°C

Power Dissipation: at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

500

T_j:T_stg

-55 to +150

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Breakdown Voltages

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-35

-30

-5

I_C=-100µA

I_C=-10mA*

I_E=-100µA

Cut-Off Currents

-0.1

-10

V_CB=-30V

V_CB=-30V, T_amb=100°C

µA

I_EBO

-0.1

V_EB=-4V

µA

Saturation Voltages

V_CE(sat)

-0.25

-0.50

-0.75

I_C=-1A, I_B=-100mA*

I_C=-2A, I_B=-200mA*

I_C=-100mA, I_B=-1mA*

FMMT549A

-0.30

-1.25

-1

V_BE(sat)

-0.9

I_C=-1A, I_B=-100mA*

I_C=-1A, V_CE=-2V*

Base Emitter Turn-on Voltage V_BE(on)

Static Forward Current h_FE

Transfer Ratio

-0.85

200

130

I_C=-50mA, V_CE=-2V*

I_C=-1A, V_CE=-2V*

I_C=-2A, V_CE=-2V*

FMMT549

FMMT549A

100

150

100

160

200

300

500

I_C=-500mA, V_CE=-2V*

Transition Frequency

f_T

MHz

I_C=-100mA, V_CE=-5V

f=100MHz

Output Capacitance

Switching Times

C_obo

t_on

V_CB=-10V, f=1MHz

I_C=-500mA, V_CC=-10V

I_B1=I_B2=-50mA

t_off

300

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3 - 127

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