Datasheet > FMMT555

FMMT555

更新时间： 2024-09-17 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	262K
描述
150 Volt VCEO, 1 Amp continuous current

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中文翻译

获取价格

数据手册

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FMMT555 数据手册

SMD Type

tIIo

oCCr

Product specification

FMMT555

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

150 Volt V^CEO

1 Amp continuous current

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

-160

-150

-5

Unit

Peak collector current

Collector current

-2

I^C

-1

Base current

I^B

-200

500

Power dissipation

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

Testconditons

Min

-160

-150

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

I^C=-100ìA

IC=-10mA

I^E=-100ìA

V^CB=-140V

-0.1

-10

-0.1

-0.3

-1

ìA

Collector cutoff current

I^CBO

V^CB=-140V, Ta = 100

V^EB=-4V

Emitter cut-off current

IEBO

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-Emitter Turn-on Voltage *

V^CE(sat)

V^BE(sat)

V^BE(ON)

I^C=-100mA, I^B=-10mA

I^C=-100mA,V^CE=-10V

I^C=-10mA, V^CE=-10V

I^C=-300mA, V^CE=-10V

I^C=-50mA,V^CE=-10V,f=100MHz

V^CB=-10V,f=1MHz

-1

300

Static Forward Current Transfer Ratio

h^FE

Transition Frequency

Output capacitance

f^T

100

MHz

C^obo

* Pulse test: tp = 300 ìs; d

0.02.

Marking

555

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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