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FMMT551 PDF预览

FMMT551

更新时间: 2024-09-16 22:48:59
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管开关光电二极管局域网
页数 文件大小 规格书
2页 108K
描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

FMMT551 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.35Is Samacsys:N
最大集电极电流 (IC):1 A基于收集器的最大容量:25 pF
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):10JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzVCEsat-Max:0.35 V
Base Number Matches:1

FMMT551 数据手册

 浏览型号FMMT551的Datasheet PDF文件第2页 
SOT23 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FMMT551  
FEATURES  
*
*
60 Volt VCEO  
E
1 Amp continuous current  
C
B
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FMMT451  
551  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-80  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
V
-5  
-2  
V
Peak Pulse Current  
A
Continuous Collector Current  
Base Current  
IC  
-1  
A
IB  
-200  
mA  
mW  
°C  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
500  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
MAX.  
UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO -80  
IC=-100µA  
Collector-Emitter  
Sustaining Voltage  
VCEO(sus) -60  
V
V
IC=-10mA*  
IE=-100µA  
VCB=-60V  
Emitter-Base Breakdown V(BR)EBO  
Voltage  
-5  
Collector Cut-Off Current ICBO  
-0.1  
µA  
µA  
V
Emitter Cut-Off Current  
IEBO  
-0.1  
VEB=-4V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.35  
IC=-150mA, IB=-15mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
hFE  
-1.1  
150  
V
IC=-150mA, IB=-15mA*  
Static Forward Current  
Transfer Ratio  
50  
10  
IC=-150mA, VCE=-10V*  
IC=-1A, VCE=-10V*  
Transition  
Frequency  
fT  
150  
MHz  
pF  
IC=-50mA, VCE=-10V  
f=100MHz  
Output Capacitance  
Cobo  
25  
VCB=-10V, f=1MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 129  

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