Datasheet > FMMT5550-1FZ

FMMT5550-1FZ

更新时间： 2024-11-07 04:18:43

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描述
SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS

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数据手册

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FMMT5550-1FZ 数据手册

SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTORS

FMMT5550

FMMT5551

ISSUE 4 - NOVEMBER 1996

✪

PARTMARKING DETAILS -

FMMT5550 1FZ

FMMT5551 ZG1

COMPLEMENTARY TYPES - FMMT5550 FMMT5400

FMMT5551 FMMT5401

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

FMMT5550 FMMT5551

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

160

140

180

160

Continuous Collector Current

Power Dissipation at T_amb=25°C

600

330

600

330

°C

P_tot

Operating and Storage Temperature Range T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

FMMT5550

FMMT5551

PARAMETER

SYMBOL

V_(BR)CBO

MIN. MAX. MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

160

140

180

160

I_C=100µA

I_C=1mA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

Emitter-Base

Breakdown Voltage

I_E=10µA*

Collector Cut-Off

Current

100

µA

_CB=100V

V_CB=100V, T_A=100°C

_CB=120V

50 nA

V_CB=120V, T_A=100°C

µA

Static Forward

Current Transfer

Ratio

h_FE

I_C=1mA, V_CE=5V

I_C=10mA, V_CE=5V

I_C=50mA, V_CE=5V

250

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

0.15

0.25

0.15 V

0.20 V

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

Base-Emitter

Saturation Voltage

1.0

1.2

1.0

1.2

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA

Transition

Frequency

100

300

100

300 MHz I_C=10mA, V_CE=10V

f=100MHz

Output Capacitance C_obo

6.0

6.0 pF

260

V_CB=10V, f=1MHz

Small Signal

h_fe

200

I_C=1mA, V_CE=10V

f=1KHz

Noise Figure

I_C=250µA, V_CE=5V,

R =1KΩ

f=10Hz to 15.7KHz

Periodic Sample Test Only

PAGE NUMBER

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