Datasheet > FMMT551

FMMT551

更新时间： 2024-11-11 06:59:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	35K
描述
Medium Power Transistor

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中文翻译

获取价格

数据手册

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FMMT551 数据手册

SMD Type

TransistIoCrs

Medium Power Transistor

FMMT551

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

60 Volt VCEO.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

1 Amp continuous current.

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

-80

-60

-5

-2

Peak collector current

Collector current

I^C

-1

Base current

I^B

-200

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,Tstg

-55 to +200

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V^(BR)CBOIC=-100ìA

V^(BR)CEOIC=-10mA

V^(BR)EBOIE=-100ìA

-80

-60

-5

ICBO

VCB=-60V

VEB=-4V

0.1

ìA

Emitter cut-off current

I^EBO

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

V^CE(sat) IC=-150mA,IB=-15mA

V^BE(sat) IC=-150mA,IB=-15mA

-0.35

-1.1

150

I^C=-150mA,VCE=-10V

h^FE

I^C=-1A, VCE=-10V

Static Forward CurrentTransfer Ratio *

Current-gain-bandwidth product

Output capacitance

f^T

IC=-50mA,VCE=-10V,f=100MHz

VCB=-10V,f=1MHz

150

MHz

C^obo

* Pulse test: tp

300 ìs; d

0.02.

Marking

551

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