SMD Type
Transistors
High Voltage High Performance Transistor
FMMT497
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
SOT23 NPN silicon planar
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
300
V
V
300
5
500
V
Collector current
mA
A
Peak collector current
Base current
ICM
1
IB
200
mA
mW
Power dissipation
Ptot
500
Operating and storage temperature range
Tj,Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
300
300
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=100ìA
V
IC=10mA
IE=100ìA
VCB=250V
VCE=250V
VEB=4V
V
100
100
100
nA
nA
nA
Collector Cut-Off Current
ICES
Emitter cut-off current
IEBO
0.2
0.3
IC=100mA,IB=10mA
IC=250mA,IB=25mA
Collector-emitter saturation voltage *
VCE(sat)
V
Base-emitter saturation voltage *
Base-emitter voltage *
VBE(sat)
VBE(ON)
1.0
1.0
V
V
IC=250mA,IB=25mA
IC=250mA,VCE=10V
IC=1mA, VCE=10V
100
80
Static Forward Current Transfer Ratio
hFE
300
IC=100mA, VCE=10V*
IC=250mA, VCE=10V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
20
Transition Frequency
fT
75
MHz
pF
Collector-Base Breakdown Voltage
Cobo
5
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
497
1
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