Datasheet > FMM5806X

FMM5806X

更新时间： 2024-11-10 23:52:27

品牌	Logo	应用领域
其他 - ETC		放大器射频微波
页数	文件大小	规格书
4页	525K
描述
Microwave/Millimeter Wave Amplifier

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FMM5806X 数据手册

FMM5806X

24-27.0GHz Power Amplifier MMIC

FEATURES

• High Output Power: P

= 26dBm (Typ.)

1dB

• High Gain: G

= 9.5dB (Typ.)

1dB

= 25% (Typ.)

• High PAE: η

add

• Wide Frequency Band: 24.0-27.0 GHz

• Impedance Matched Zin/Zout = 50Ω

• 0.25µm PHEMT Technology

DESCRIPTION

The FMM5806X is a high-gain, wide band 2-stage MMIC

amplifier designed for operation in the 24.0-27.0 GHz

frequency range. This amplifier has an input and output

designed for use in 50Ω systems.This device is well suited for

millimeter wave radio applications.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain Voltage

Gate Voltage

Input Power

-3.0

dBm

°C

Storage Temperature

-65 to +175

stg

Operating Backside Temperature

-40 to +95

°C

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 1.5 and -0.12 mA respectively.

3. This product should be hermetically packaged

ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)

Limits

Typ.

Item

Symbol

Conditions

Unit

Min.

Max.

GHz

Frequency Range

24.0 - 27.0

Output Power at 1 dB G.C.P.

8.0

dBm

1dB

Power Gain at 1 dB G.C.P.

Drain Current

9.5

280

14.5

380

1dB

= 6V

= 220mA (Typ.)

ddrf

Z = Z = 50Ω

add

Power-Added Efficiency

Input Return Loss

RLi

-12

-8

Output Return Loss

RLo

Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)

G.C.P.: Gain Compression Point

Edition 1.0

June 2000

This Material Copyrighted by Its Respective Manufacturer

12 3 4

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