是否无铅: | 不含铅 | 生命周期: | Transferred |
包装说明: | IN-LINE, R-PSIP-T5 | 针数: | 5 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED, UL RECOGNIZED | 雪崩能效等级(Eas): | 1000 mJ |
外壳连接: | ISOLATED | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 33 A |
最大漏极电流 (ID): | 33 A | 最大漏源导通电阻: | 0.04 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T5 |
JESD-609代码: | e1 | 元件数量: | 2 |
端子数量: | 5 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 125 W | 最大脉冲漏极电流 (IDM): | 150 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FMM65-015P | IXYS |
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Trench Power MOSFET | |
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM6G20US60S | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM6G30US60 | FAIRCHILD |
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Compact & Complex Module | |
FMM6G50US60 | FAIRCHILD |
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Compact & Complex Module | |
FMM6N0103J02L | KYOCERA AVX |
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DC Filtering MPF Capacitor | |
FMM6N0103K02L | KYOCERA AVX |
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DC Filtering MPF Capacitor | |
FMM6N0103M02L | KYOCERA AVX |
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DC Filtering MPF Capacitor | |
FMM6N0123J02L | KYOCERA AVX |
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DC Filtering MPF Capacitor | |
FMM6N0123K02L | KYOCERA AVX |
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DC Filtering MPF Capacitor |