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FMM60-02TF PDF预览

FMM60-02TF

更新时间: 2024-11-11 10:34:51
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页数 文件大小 规格书
2页 95K
描述
Trench Gate HiperFET N-Channel Power MOSFET

FMM60-02TF 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T5针数:5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
其他特性:AVALANCHE RATED, UL RECOGNIZED雪崩能效等级(Eas):1000 mJ
外壳连接:ISOLATED配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):33 A
最大漏极电流 (ID):33 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T5
JESD-609代码:e1元件数量:2
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FMM60-02TF 数据手册

 浏览型号FMM60-02TF的Datasheet PDF文件第2页 
Advance Technical Information  
Trench Gate HiperFET  
N-Channel Power MOSFET  
VDSS = 200V  
ID25 = 33A  
RDS(on) 40mΩ  
trr(typ) = 82ns  
FMM60-02TF  
3
T1  
2  
5
4
Phase Leg Topology  
1
ISOPLUS i4-PakTM  
2
Symbol  
Test Conditions  
Maximum Ratings  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
1
Isolated Tab  
5
VISOLD  
50/60HZ, RMS, t = 1min, leads-to-tab  
2500  
~V  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting force  
20..120 / 4.5..27  
N/lb.  
Features  
z Silicon chip on Direct-Copper Bond  
(DCB) substrate  
- UL recognized package  
- Isolated mounting surface  
- 2500V electrical isolation  
z Avalanche rated  
z Low QG  
z Low Drain-to-Tab capacitance  
z Low package inductance  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
200  
200  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSM  
Transient  
± 30  
V
ID25  
IDM  
TC = 25°C  
33  
A
A
TC = 25°C, pulse width limited by TJM  
150  
IA  
TC = 25°C  
TC = 25°C  
5
1
A
J
Advantages  
EAS  
z
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
Low gate drive requirement  
High power density  
Fast intrinsic rectifier  
Low drain to ground capacitance  
z
125  
z
z
z
Fast switching  
Symbol  
CP  
Test Conditions  
Characteristic Values  
Applications  
Min.  
Typ.  
Max.  
z DC and AC motor drives  
z UPS, solar and wind power inverters  
z Synchronous rectifiers  
Coupling capacitance between shorted  
pins and mounting tab in the case  
40  
pF  
z Multi-phase DC to DC converters  
z Industrial battery chargers  
z Switching power supplies  
dS ,dA  
dS ,dA  
pin - pin  
pin - backside metal  
1.7  
5.5  
mm  
mm  
Weight  
9
g
DS100048(09/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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