FMMBD4448HSDW

更新时间： 2024-11-11 10:34:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		二极管开关
页数	文件大小	规格书
4页	215K
描述
SURFACE MOUNT SWITCHING DIODE ARRAYS

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中文翻译

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数据手册

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FMMBD4448HSDW 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

WBFBP-06C Plastic-Encapsulate Diode

FMMBD4448HSDW

SURFACE MOUNT SWITCHING DIODE ARRAYS

WBFBP-06C

(2×2×0.5)

unit: mm

DESCRIPTION

Silicon epitaxial planar

Switching Diode

FEATURES

Ultra-Small Surface Mount Package

Fast Switching Speed

High Conductance

APPLICATION

For General Purpose Switching Applications, rectifiers

For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,

DVD-ROM, Note book PC, etc.)

FMMBD4448HSDW

Marking:KAB

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25

Parameter

Symbol

Limits

Unit

Non-Repetitive Peak reverse voltage

V_RM

100

Peak Repetitive peak reverse voltage

Working Peak Reverse Voltage

V_RRM

V_RWM

V_R

DC Blocking

Voltage

RMS Reverse Voltage

V_R(RMS)

I_FM

500

250

4.0

Forward Continuous Current

Average Rectified Output Current

Non-Repetitive Peak forward surge current @=1.0µs

I_O

I_FSM

@=1.0s

2.0

Power Dissipation

R_θJA

T_J

150

625

℃/W

℃

Thermal Resistance Junction to Ambient

Junction temperature

150

Storage temperature range

T_STG

-65 to +150

℃

Electrical Ratings @T_A=25℃

Parameter

Symbol

V_R

Min.

0.62

Typ.

Max. Unit

Conditions

I_R=100μA

I_F=5mA

Reverse Breakdown Voltage

V_F1

V_F2

V_F3

V_F4

I_R1

0.72

0.855

1.0

1.25

0.1

I_F=10mA

Forward voltage

I_F=100mA

I_F=150mA

V_R=70V

µA

Reverse current

I_R2

V_R=20V

Capacitance between terminals

Reverse Recovery Time

C_T

3.5

V_R=6V,f=1MHz

V_R=6V,I_F=5mA

t_rr

12 3 4

中文翻译

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