生命周期: | Active | 包装说明: | 24PM-AA, 24 PIN |
针数: | 24 | Reach Compliance Code: | unknown |
风险等级: | 5.68 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 20 A |
集电极-发射极最大电压: | 600 V | 配置: | COMPLEX |
JESD-30 代码: | R-XUFM-T24 | 元件数量: | 7 |
端子数量: | 24 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | COMMERCIAL |
表面贴装: | NO | 端子面层: | NOT SPECIFIED |
端子形式: | THROUGH-HOLE | 端子位置: | UPPER |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 360 ns | 标称接通时间 (ton): | 145 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FMM7G20US60N | ROCHESTER |
获取价格 |
20A, 600V, N-CHANNEL IGBT, 24PM-AA, 24 PIN | |
FMM7G20US60N | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G20US60SI | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G20US60SN | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G30US60N | FAIRCHILD |
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Compact & Complex Module | |
FMM7G30US60SI | FAIRCHILD |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G30US60SN | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G50US60I | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN | |
FMM7G50US60I | ROCHESTER |
获取价格 |
50A, 600V, N-CHANNEL IGBT, 24PM-AA, 24 PIN | |
FMMBD4448HADW | CJ |
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SURFACE MOUNT SWITCHING DIODE ARRAYS |