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FMM5829X PDF预览

FMM5829X

更新时间: 2024-02-26 05:52:35
品牌 Logo 应用领域
EUDYNA 放大器射频微波功率放大器
页数 文件大小 规格书
14页 259K
描述
K-Band Power Amplifier MMIC

FMM5829X 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.17Is Samacsys:N
其他特性:HIGH RELIABILITY特性阻抗:50 Ω
构造:COMPONENT最大输入功率 (CW):22 dBm
最大工作频率:27000 MHz最小工作频率:21000 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:WIDE BAND MEDIUM POWERBase Number Matches:1

FMM5829X 数据手册

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FMM5829X  
K-Band Power Amplifier MMIC  
FEATURES  
•High Output Power; P1dB = 31 dBm (Typ.)  
•High Linear Gain; GL = 23 dB(Typ.)  
•Frequency Band ; 21.0 - 27.0 GHz  
•High Linearity ; OIP3 = 39dBm  
•Impedance Matched Zin/Zout = 50  
DESCRIPTION  
The FMM5829X is a power amplifier MMIC that contains a four  
stage amplifier, internally matched, for standard communications  
band in 21.0 to 27.0GHz frequency range. This product is well  
suited for point-to-point radio applications.  
Eudyna’s stringent Quality Assurance Program assures the  
highest reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING  
Item  
Symbol  
VDD  
VGG  
Pin  
Condition  
Condition  
Unit  
V
V
dBm  
degC  
Rating  
10  
-3  
22  
Drain-Source Voltage  
Gate-Source Voltage  
Input Power  
Storage Temperature  
Tstg  
-55 ~ +125  
RECOMMENDED OPERATING CONDITIONS  
Item Symbol  
Drain-Source Voltage  
Unit  
V
Recommend  
7  
VDD  
12  
Input Power  
Pin  
dBm  
Operating Backside Temperature  
Top  
degC  
-40 ~ +85  
This Product should be hermetically packaged.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25)  
Unit  
Limits  
Min. Typ. Max.  
Item  
Symbol  
Test Conditions  
VDD=6V  
IDD(DC)=800mA(typ)  
Zs=Zl=50ohm  
21  
29.0  
19  
-
27  
Frequency Range  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Power-added Efficiency at 1dB G.C.P.  
f
GHz  
dBm  
dB  
31.0  
22  
21  
P1dB  
G1dB  
Nadd  
-
25  
-
-
%
*df=10MHz,Po=20dBm (SCL) -34  
-38  
-
dBc  
mA  
dB  
Third Order Intermodulation*  
Drain Current at 1dB G.C.P.  
Input Return Loss (at Pin=-20dBm)  
Output Return Loss (at Pin=-20dBm)  
IM3*  
Iddrf  
RLin  
RLout  
-
-
-
1000 1500  
-8  
-8  
-
dB  
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)  
G.C.P. : Gain Compression Point  
S.C.L. : Single Carrier Level  
ESD  
Class 0  
~ 199V  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)  
Edition 2.0  
April 2006  
1
http://www.eudyna.com/  

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