5秒后页面跳转
FMM5822X PDF预览

FMM5822X

更新时间: 2024-11-11 04:18:43
品牌 Logo 应用领域
EUDYNA 放大器功率放大器
页数 文件大小 规格书
14页 298K
描述
K-Band Power Amplifier MMIC

FMM5822X 数据手册

 浏览型号FMM5822X的Datasheet PDF文件第2页浏览型号FMM5822X的Datasheet PDF文件第3页浏览型号FMM5822X的Datasheet PDF文件第4页浏览型号FMM5822X的Datasheet PDF文件第5页浏览型号FMM5822X的Datasheet PDF文件第6页浏览型号FMM5822X的Datasheet PDF文件第7页 
FMM5822X  
K-Band Power Amplifier MMIC  
FEATURES  
•High Output Power; P1dB = 32.5 dBm (Typ.)  
•High Linear Gain; GL = 22 dB(Typ.)  
•Frequency Band ; 17.5 - 20.0 GHz  
•High Linearity ; OIP3 = 41dBm  
•Impedance Matched Zin/Zout = 50W  
DESCRIPTION  
The FMM5822X is a power amplifier MMIC that contains a three  
stage amplifier, internally matched, for standard communications  
band in 17.5 to 20.0GHz frequency range. This product is well  
suited for point-to-point radio applications.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING  
Rating  
10  
-3  
Item  
Drain-Source Voltage  
Gate-Source Voltage  
Input Power  
Stmbol  
VDD  
VGG  
Pin  
Condition  
Condition  
Unit  
V
V
dBm  
25  
-55 to +125  
Strage Temperature  
Tstg  
RECOMMENDED OPERATING CONDITIONS  
Item Symbol  
Drain-Source Voltage  
Input Power  
Operating Backside Temperature  
Recommended  
7*  
Unit  
V
dBm  
VDD  
Pin  
Top  
15  
-40 to +85  
* : FMM5822X/001 Recommended Drain-Source Voltage VDD 8V  
This Product should be hermetically packaged.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25  
)
Limits  
Min. Typ. Max.  
Item  
Symbol  
Test Conditions  
Unit  
Frequency Range  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Power Added Efficiency at 1dB G.C.P.  
Third Order Intermodulation  
Drain Current at 1dB G.C.P.  
Input Return Loss at Pin=-20dBm  
Output Return Loss at Pin=-20dBm  
f
VDD=6.0V  
IDD(DC)=850mA typ.  
Zs=Zl=50ohm  
17.5  
30.5  
19  
-
20  
-
25  
-
GHz  
dBm  
dB  
P1dB  
G1dB  
Nadd  
IM3*  
Iddrf  
RLin  
RLout  
32.5  
21  
30  
-
-38  
-
%
ꢀꢀ  
*df=10MHz,Po=20.5dBm  
(S.C.L.)  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ  
-41  
-
dBc  
mA  
dB  
1000 1500  
-8  
-12  
-
-
-
-
dB  
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)  
G.C.P. : Gain Compression Point  
S.C.L. : Single Carrier Level  
ESD  
Class 0  
~ 199V  
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)  
Edition 2.1  
November 2004  
1

与FMM5822X相关器件

型号 品牌 获取价格 描述 数据表
FMM5823X EUDYNA

获取价格

K-Band Power Amplifier MMIC
FMM5826X EUDYNA

获取价格

Ka-Band Power Amplifier MMIC
FMM5829X EUDYNA

获取价格

K-Band Power Amplifier MMIC
FMM60-02TF IXYS

获取价格

Trench Gate HiperFET N-Channel Power MOSFET
FMM65-015P IXYS

获取价格

Trench Power MOSFET
FMM6G20US60 FAIRCHILD

获取价格

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN
FMM6G20US60S FAIRCHILD

获取价格

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, 24PM-AA, 24 PIN
FMM6G30US60 FAIRCHILD

获取价格

Compact & Complex Module
FMM6G50US60 FAIRCHILD

获取价格

Compact & Complex Module
FMM6N0103J02L KYOCERA AVX

获取价格

DC Filtering MPF Capacitor