Datasheet > FMM5807X

FMM5807X

更新时间： 2024-11-11 04:18:43

品牌	Logo	应用领域
EUDYNA		放大器射频微波功率放大器
页数	文件大小	规格书
4页	866K
描述
21-27GHz Power Amplifier MMIC

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中文翻译

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技术参数
数据手册

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FMM5807X 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.17	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	25 dBm
最大工作频率：	27000 MHz	最小工作频率：	21000 MHz
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	WIDE BAND MEDIUM POWER	Base Number Matches：	1

FMM5807X 数据手册

FMM5807X

21-27GHz Power Amplifier MMIC

FEATURES

• High Output Power: P

= 30dBm (Typ.)

1dB

• High Gain: G

= 14dB (Typ.)

1dB

= 20% (Typ.)

• High PAE: η

add

• Wide Frequency Band: 21-27 GHz

• Impedance Matched Zin/Zout = 50Ω

• 0.25µm PHEMT Technology

DESCRIPTION

The FMM5807X is a high-gain, wide band 3-stage

MMIC amplifier designed for operation in the 21-27GHz

frequency range. This amplifier has an input and output

designed for use in 50Ω systems. This device is well suited

for millimeter wave radio applications.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

Input Power

-3.0

dBm

°C

Storage Temperature

-65 to +175

stg

Operating Backside Temperature

-40 to +85

°C

Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 6 volts.

2. The forward and reverse gate currents should not exceed 4.0 and -0.33 mA respectively.

3. This product should be hermetically packaged.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Tc=25°C)

Limits

Item

Symbol

Conditions

Unit

Min.

Max.

Typ.

21 - 27

29*

GHz

Frequency Range

27*

Output Power at 1 dB G.C.P.

dBm

1dB

28** 30**

= 6V

Power Gain at 1 dB G.C.P.

Drain Current

700

950

1dB

f = 21 ~ 27 GHz

*: at f = 21-24 GHz

**: at f = 24-27 GHz

ddrf

= 650mA (Typ.)

Z = Z = 50Ω

Power-Added Efficiency

Input Return Loss

add

-12

-8

Output Return Loss

out

Note: RF parameter sample size 10pcs./wafer. Criteria (accept/reject)=(0/1)

G.C.P.: Gain Compression Point

Edition 1.2

January 2001

12 3 4

中文翻译

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