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FM24V02-GTR PDF预览

FM24V02-GTR

更新时间： 2024-11-12 12:23:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
16页 401K
描述
256Kb Serial 3V F-RAM Memory

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中文翻译

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FM24V02-GTR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.71
风险等级：5.62JESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
内存密度：262144 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：8
字数：32768 words字数代码：32000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：32KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1.75 mm最大待机电流：0.00015 A
子类别：SRAMs最大压摆率：0.001 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：NICKEL PALLADIUM GOLD端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：20宽度：3.9 mm
Base Number Matches：1

FM24V02-GTR 数据手册

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FM24V02  
256Kb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
256K bit Ferroelectric Nonvolatile RAM  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM24VN02)  
Organized as 32,768 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 year Data Retention  
Low Voltage, Low Power Operation  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Low Voltage Operation 2.0V – 3.6V  
Active Current < 150 A (typ. @ 100KHz)  
90 A Standby Current (typ.)  
Fast Two-wire Serial Interface  
5 A Sleep Mode Current (typ.)  
Up to 3.4 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Industry Standard Configuration  
Industrial Temperature -40C to +85C  
8-pin “Green”/RoHS SOIC Package  
available in industry standard 8-pin SOIC package  
using a familiar two-wire (I2C) protocol. The  
FM24VN02 is offered with a unique serial number  
that is read-only and can be used to identify a board  
or system. Both devices incorporate a read-only  
Device ID that allows the host to determine the  
manufacturer, product density, and product revision.  
The devices are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
Description  
The FM24V02 is a 256Kbit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
Pin Configuration  
The FM24V02 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
A2  
SCL  
SDA  
VSS  
These capabilities make the FM24V02 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Pin Name  
A0-A2  
SDA  
SCL  
WP  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Supply Voltage  
Ground  
VDD  
VSS  
The FM24V02 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The devices are  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.0  
Jan. 2012  
Page 1 of 16  
1234567...16

中文翻译

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FM24V02-GTR 替代型号

型号 品牌 替代类型 描述 数据表
FM24V10-GTR CYPRESS

完全替代

 1Mb Serial 3V F-RAM Memory
FM24V10-G CYPRESS

完全替代

 1Mb Serial 3V F-RAM Memory
FM24V05-G CYPRESS

完全替代

 512Kb Serial 3V F-RAM Memory

与FM24V02-GTR相关器件

型号 品牌 获取价格 描述 数据表
FM24V05 RAMTRON

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 		512Kb Serial 3V F-RAM Memory
FM24V05_10 RAMTRON

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 		512Kb Serial 3V F-RAM Memory
FM24V05_13 CYPRESS

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 		512Kb Serial 3V F-RAM Memory
FM24V05-G CYPRESS

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 		512Kb Serial 3V F-RAM Memory
FM24V05-G RAMTRON

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 		512Kb Serial 3V F-RAM Memory
FM24V05-G INFINEON

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 		铁电存储器 (F-RAM)
FM24V05-GTR CYPRESS

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 		512Kb Serial 3V F-RAM Memory
FM24V05-GTR RAMTRON

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 		512Kb Serial 3V F-RAM Memory
FM24V05-GTR INFINEON

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 		铁电存储器 (F-RAM)
FM24V10 RAMTRON

获取价格

 		1Mb Serial 3V F-RAM Memory

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