FM24VN05-GTR

更新时间： 2024-02-14 04:16:44

品牌	Logo	应用领域
铁电 - RAMTRON		存储内存集成电路光电二极管
页数	文件大小	规格书
15页	200K
描述
512Kb Serial 3V F-RAM Memory

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中文翻译

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技术参数
数据手册

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FM24VN05-GTR 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	,	针数：	8
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.84	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G8	内存集成电路类型：	MEMORY CIRCUIT
端子数量：	8	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
Base Number Matches：	1

FM24VN05-GTR 数据手册

Preliminary

FM24V05

512Kb Serial 3V F-RAM Memory

Features

Device ID and Serial Number

512K bit Ferroelectric Nonvolatile RAM

•

Device ID reads out Manufacturer ID & Part ID

Unique Serial Number (FM24VN05)

•

Organized as 65,536 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

•

Low Voltage Operation 2.0V – 3.6V

Active Current < 150 µA (typ. @ 100KHz

90 µA Standby Current (typ.)

)

Fast Two-wire Serial Interface

5 µA Sleep Mode Current (typ.)

•

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

8-pin “Green”/RoHS SOIC Package

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. The

FM24VN05 is offered with a unique serial number

that is read-only and can be used to identify a board

or system. Both devices incorporate a read-only

Device ID that allows the host to determine the

manufacturer, product density, and product revision.

The devices are guaranteed over an industrial

temperature range of -40°C to +85°C.

Description

The FM24V05 is a 512Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V05 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

These capabilities make the FM24V05 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Pin Name

A0-A2

SDA

Function

Device Select Address

Serial Data/address

Serial Clock

Write Protect

Supply Voltage

Ground

SCL

VDD

VSS

The FM24V05 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

a hardware drop-in replacement. The devices are

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.1

Feb. 2009

Page 1 of 15

12 3 4 5 6 7...15

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与FM24VN05-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24VN10-G	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24VN10-G	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24VN10-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VN10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24VN10-GTR	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24VN10-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VS64	FM	获取价格	专用NVM存储器
FM24VS64R	FM	获取价格	专用NVM存储器
FM24W256	CYPRESS	获取价格	256Kb Wide Voltage Serial F-RAM
FM24W256	RAMTRON	获取价格	256Kb Wide Voltage Serial F-RAM

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