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FM24VN10-GTR PDF预览

FM24VN10-GTR

更新时间: 2024-01-23 17:37:53
品牌 Logo 应用领域
铁电 - RAMTRON 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
15页 206K
描述
1Mb Serial 3V F-RAM Memory

FM24VN10-GTR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:8.48Is Samacsys:N
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:1048576 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:2.5/3.3 V
认证状态:Not Qualified座面最大高度:1.75 mm
最大待机电流:0.00015 A子类别:SRAMs
最大压摆率:0.001 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

FM24VN10-GTR 数据手册

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Preliminary  
FM24V10  
1Mb Serial 3V F-RAM Memory  
Features  
Device ID and Serial Number  
1M bit Ferroelectric Nonvolatile RAM  
Device ID reads out Manufacturer ID & Part ID  
Unique Serial Number (FM24VN10)  
Organized as 131,072 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 year Data Retention  
Low Voltage, Low Power Operation  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Low Voltage Operation 2.0V – 3.6V  
Active Current < 150 µA (typ. @ 100KHz  
90 µA Standby Current (typ.)  
)
Fast Two-wire Serial Interface  
5 µA Sleep Mode Current (typ.)  
Up to 3.4 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Industry Standard Configuration  
Industrial Temperature -40° C to +85° C  
8-pin “Green”/RoHS SOIC Package  
available in industry standard 8-pin SOIC package  
using a familiar two-wire (I2C) protocol. The  
FM24VN10 is offered with a unique serial number  
that is read-only and can be used to identify a board  
or system. Both devices incorporate a read-only  
Device ID that allows the host to determine the  
manufacturer, product density, and product revision.  
The devices are guaranteed over an industrial  
temperature range of -40°C to +85°C.  
Description  
The FM24V10 is a 1-megabit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
Pin Configuration  
The FM24V10 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
1
2
3
4
8
7
6
5
VDD  
WP  
NC  
A1  
A2  
SCL  
SDA  
VSS  
These capabilities make the FM24V10 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Pin Name  
A1, A2  
SDA  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Supply Voltage  
Ground  
SCL  
WP  
VDD  
VSS  
The FM24V10 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
a hardware drop-in replacement. The devices are  
This is a product that has fixed target specifications but are subject  
to change pending characterization results.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 1.1  
Feb. 2009  
Page 1 of 15  

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