FM24W256-G

更新时间： 2024-02-20 12:12:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
14页	356K
描述
256Kb Wide Voltage Serial F-RAM

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技术参数
数据手册

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FM24W256-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SOIC	包装说明：	SOP, SOP8,.25
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	1.03	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.9 mm
内存密度：	262144 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	8	混合内存类型：	N/A
湿度敏感等级：	3	功能数量：	1
端子数量：	8	字数：	32768 words
字数代码：	32000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP8,.25
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	电源：	3/5 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最大待机电流：	0.00003 A	子类别：	SRAMs
最大压摆率：	0.0004 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
宽度：	3.9 mm	Base Number Matches：	1

FM24W256-G 数据手册

Pre-Production

FM24W256

256Kb Wide Voltage Serial F-RAM

Features

Low Power Operation

256K bit Ferroelectric Nonvolatile RAM

Organized as 32,768 x 8 bits

Wide Voltage Operation 2.7V-5.5V

100 A Active Current (100 kHz)

15 A Standby Current (typ.)

High Endurance 100 Trillion (10¹⁴) Read/Writes

38 year Data Retention (@ +75ºC)

NoDelay™ Writes

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

Up to 1 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Description

Pin Configuration

The FM24W256 is a 256-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 38 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

VDD

SCL

SDA

VSS

The FM24W256 performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array immediately after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers

substantial write endurance compared with other

nonvolatile memories. The FM24W256 is capable of

supporting 10¹⁴read/write cycles, or 100 million

times more write cycles than EEPROM.

Pin Names

A0-A2

SDA

SCL

Function

Device Select Address

Serial Data/Address

Serial Clock

Write Protect

Ground

VSS

VDD

Supply Voltage

These capabilities make the FM24W256 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Ordering Information

FM24W256-G

8-pin “Green”/RoHS SOIC

FM24W256-GTR

8-pin “Green”/RoHS SOIC, Tape

& Reel

FM24W256-EG*

FM24W256-EGTR*

8-pin “Green”/RoHS EIAJ SOIC

8-pin “Green”/RoHS EIAJ SOIC,

Tape & Reel

* Not Recommended for New Designs

The FM24W256 provides substantial benefits to

users of serial EEPROM, yet these benefits are

available in a hardware drop-in replacement. The

FM24W256 is available in industry standard 8-pin

SOIC package using a familiar two-wire protocol. It

is guaranteed over an industrial temperature range of

-40°C to +85°C.

This is a product in the pre-production phase of development. Device characterization is complete and Ramtron does not expect to

change the specifications. Ramtron will issue a Product Change Notice if any specification changes are made.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-84464 Rev. *A

Revised March 07, 2013

12 3 4 5 6 7...14

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FM24W256-GTR	RAMTRON	256Kb Wide Voltage Serial F-RAM	获取价格
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FM24W256-GTR	INFINEON	铁电存储器 (F-RAM)	获取价格
FM24W7P1-K120	MOLEX	D Subminiature Connector, 24 Contact(s), Male, Solder Terminal	获取价格
FM24W7P2-K120	MOLEX	D Subminiature Connector, 24 Contact(s), Male, Solder Terminal,	获取价格
FM24W7P4-K120	MOLEX	D Subminiature Connector, 24 Contact(s), Male, Wire Wrap Terminal,	获取价格

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