FM24V10-G

更新时间： 2024-11-12 12:06:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
17页	417K
描述
1Mb Serial 3V F-RAM Memory

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中文翻译

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技术参数
数据手册
替代型号

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FM24V10-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SOIC	包装说明：	SOP, SOP8,.25
针数：	8	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	0.71	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.9 mm
内存密度：	1048576 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	8
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
电源：	2.5/3.3 V	认证状态：	Not Qualified
座面最大高度：	1.75 mm	最大待机电流：	0.00015 A
子类别：	SRAMs	最大压摆率：	0.001 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	30	宽度：	3.9 mm
Base Number Matches：	1

FM24V10-G 数据手册

FM24V10

1Mb Serial 3V F-RAM Memory

Features

Device ID and Serial Number

1M bit Ferroelectric Nonvolatile RAM

Organized as 131,072 x 8 bits

Device ID reads out Manufacturer ID & Part ID

Unique Serial Number (FM24VN10)

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

Low Voltage Operation 2.0V – 3.6V

Active Current < 150 A (typ. @ 100KHz)

90 A Standby Current (typ.)

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

5 A Sleep Mode Current (typ.)

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. The

FM24VN10 is offered with a unique serial number

that is read-only and can be used to identify a board

or system. Both devices incorporate a read-only

Device ID that allows the host to determine the

manufacturer, product density, and product revision.

The devices are guaranteed over an industrial

temperature range of -40°C to +85°C.

Description

The FM24V10 is a 1-megabit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V10 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

These capabilities make the FM24V10 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Pin Name

A1, A2

SDA

SCL

Function

Device Select Address

Serial Data/address

Serial Clock

Write Protect

Supply Voltage

Ground

VDD

VSS

The FM24V10 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

a hardware drop-in replacement. The devices are

This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s

internal qualification testing and has reached production status.

Cypress Semiconductor Corporation

Document Number: 001-84463 Rev. **

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised February 25, 2013

12 3 4 5 6 7...17

中文翻译

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FM24V10-G 替代型号

型号	品牌	替代类型	描述	数据表
FM24VN10-G	CYPRESS	完全替代	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	CYPRESS	完全替代	1Mb Serial 3V F-RAM Memory
FM24V05-G	CYPRESS	完全替代	512Kb Serial 3V F-RAM Memory

与FM24V10-G相关器件

型号	品牌	获取价格	描述	数据表
FM24V10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VN01-G	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24VN01-GTR	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24VN02-G	CYPRESS	获取价格	256Kb Serial 3V F-RAM Memory
FM24VN02-G	RAMTRON	获取价格	256Kb Serial 3V F-RAM Memory
FM24VN02-GTR	RAMTRON	获取价格	256Kb Serial 3V F-RAM Memory
FM24VN02-GTR	CYPRESS	获取价格	256Kb Serial 3V F-RAM Memory
FM24VN05-G	RAMTRON	获取价格	512Kb Serial 3V F-RAM Memory

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