Datasheet > FM24V05-G

FM24V05-G

更新时间： 2024-01-15 01:57:57

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储
页数	文件大小	规格书
17页	387K
描述
512Kb Serial 3V F-RAM Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FM24V05-G 技术参数

生命周期：	Transferred	零件包装代码：	SOIC
包装说明：	SOP,	针数：	8
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.65	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G8	长度：	4.9 mm
内存密度：	524288 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	8	功能数量：	1
端子数量：	8	字数：	65536 words
字数代码：	64000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	64KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
座面最大高度：	1.75 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
宽度：	3.9 mm	Base Number Matches：	1

FM24V05-G 数据手册

FM24V05

512Kb Serial 3V F-RAM Memory

Features

Device ID

Device ID reads out Manufacturer ID & Part ID

512K bit Ferroelectric Nonvolatile RAM

Organized as 65,536 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

Low Voltage Operation 2.0V – 3.6V

Active Current < 150 A (typ. @ 100KHz)

90 A Standby Current (typ.)

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

5 A Sleep Mode Current (typ.)

Fast Two-wire Serial Interface

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

a hardware drop-in replacement. The devices are

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. Both

devices incorporate a read-only Device ID that allows

the host to determine the manufacturer, product

density, and product revision. The devices are

guaranteed over an industrial temperature range of -

40°C to +85°C.

Description

The FM24V05 is a 512Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V05 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

Pin Name

A0-A2

SDA

SCL

Function

These capabilities make the FM24V05 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Device Select Address

Serial Data/address

Serial Clock

Write Protect

Supply Voltage

Ground

VDD

VSS

The FM24V05 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s

internal qualification testing and has reached production status.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-84462 Rev. *B

Revised May 29, 2013

12 3 4 5 6 7...17

中文翻译

下载PDF

FM24V05-G 替代型号

型号	品牌	替代类型	描述	数据表
FM24V10-GTR	CYPRESS	完全替代	1Mb Serial 3V F-RAM Memory
FM24V10-G	CYPRESS	完全替代	1Mb Serial 3V F-RAM Memory

与FM24V05-G相关器件

型号	品牌	获取价格	描述	数据表
FM24V05-GTR	CYPRESS	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05-GTR	RAMTRON	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_13	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory

与FM24V05-G相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

1
PMOS管背靠背连接：串联还是并联？
2024-06-28

2
高压电解电容的分类与选型策略
2024-06-28

3
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

7

产品中心

服务支持

精选活动

关于我们

帮助中心

FM24V05-G

FM24V05-G 技术参数

FM24V05-G 数据手册

FM24V05-G 替代型号

与FM24V05-G相关器件

与FM24V05-G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FM24V05-G

FM24V05-G 技术参数

FM24V05-G 数据手册

FM24V05-G 替代型号

与FM24V05-G相关器件

与FM24V05-G相关文章

您还可以找

您在本页遇到什么问题？