Datasheet > FM24V05-GTR

FM24V05-GTR

更新时间： 2024-11-13 15:18:23

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
21页	514K
描述
铁电存储器 (F-RAM)

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FM24V05-GTR 数据手册

FM24V05

512-Kbit (64 K × 8) Serial (I²C) F-RAM

512-Kbit (64

K × 8) Serial (I²C) F-RAM

Features

Functional Description

The FM24V05 is a 512-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 512-Kbit ferroelectric random access memory (F-RAM)

logically organized as 64 K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24V05 performs write operations at bus

speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The FM24V05 is

capable of supporting 10¹⁴read/write cycles, or 100 million times

more write cycles than EEPROM.

■ Fast 2-wire Serial interface (I²C)

❐ Up to 3.4-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Device ID

❐ Manufacturer ID and Product ID

■ Low power consumption

❐ 175 A active current at 100 kHz

❐ 90 A (typ) standby current

❐ 5 A (typ) sleep mode current

These capabilities make the FM24V05 ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The FM24V05 provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

industrial temperature range of –40 C to +85 C.

For a complete list of related documentation, click here.

Logic Block Diagram

64 K x 8

F-RAM Array

Address

Latch

Counter

Serial to Parallel

Converter

SDA

Data Latch

SCL

Device ID and

Manufacturer ID

Control Logic

A2-A0

Errata: STOP condition is optional for sleep mode entry. For more information, see Errata on page 18. Details include errata trigger conditions, scope of impact, available

workarounds, and silicon revision applicability.

Cypress Semiconductor Corporation

Document Number: 001-84462 Rev. *H

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 6, 2015

12 3 4 5 6 7...21

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与FM24V05-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24V10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_13	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VN01-G	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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