Datasheet > FM24V05-GTR

FM24V05-GTR

更新时间： 2024-11-12 12:06:23

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路光电二极管
页数	文件大小	规格书
17页	387K
描述
512Kb Serial 3V F-RAM Memory

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中文翻译

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数据手册
替代型号

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FM24V05-GTR 数据手册

FM24V05

512Kb Serial 3V F-RAM Memory

Features

Device ID

Device ID reads out Manufacturer ID & Part ID

512K bit Ferroelectric Nonvolatile RAM

Organized as 65,536 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

Low Voltage Operation 2.0V – 3.6V

Active Current < 150 A (typ. @ 100KHz)

90 A Standby Current (typ.)

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

5 A Sleep Mode Current (typ.)

Fast Two-wire Serial Interface

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

a hardware drop-in replacement. The devices are

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. Both

devices incorporate a read-only Device ID that allows

the host to determine the manufacturer, product

density, and product revision. The devices are

guaranteed over an industrial temperature range of -

40°C to +85°C.

Description

The FM24V05 is a 512Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V05 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

Pin Name

A0-A2

SDA

SCL

Function

These capabilities make the FM24V05 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Device Select Address

Serial Data/address

Serial Clock

Write Protect

Supply Voltage

Ground

VDD

VSS

The FM24V05 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s

internal qualification testing and has reached production status.

Cypress Semiconductor Corporation

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Document Number: 001-84462 Rev. *B

Revised May 29, 2013

12 3 4 5 6 7...17

中文翻译

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FM24V05-GTR 替代型号

型号	品牌	替代类型	描述	数据表
FM24V01-GTR	CYPRESS	完全替代	128Kb Serial 3V F-RAM Memory
FM24V01-G	CYPRESS	完全替代	128Kb Serial 3V F-RAM Memory
FM24V02-G	CYPRESS	类似代替	256Kb Serial 3V F-RAM Memory

与FM24V05-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24V10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_10	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10_13	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VN01-G	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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