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FM24V05-GTR PDF预览

FM24V05-GTR

更新时间: 2024-01-06 20:56:33
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路光电二极管
页数 文件大小 规格书
17页 387K
描述
512Kb Serial 3V F-RAM Memory

FM24V05-GTR 数据手册

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FM24V05  
512Kb Serial 3V F-RAM Memory  
Features  
Device ID  
Device ID reads out Manufacturer ID & Part ID  
512K bit Ferroelectric Nonvolatile RAM  
Organized as 65,536 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 year Data Retention  
Low Voltage, Low Power Operation  
Low Voltage Operation 2.0V 3.6V  
Active Current < 150 A (typ. @ 100KHz)  
90 A Standby Current (typ.)  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
5 A Sleep Mode Current (typ.)  
Fast Two-wire Serial Interface  
Up to 3.4 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Industry Standard Configuration  
Industrial Temperature -40 C to +85 C  
8-pin “Green”/RoHS SOIC Package  
a hardware drop-in replacement. The devices are  
available in industry standard 8-pin SOIC package  
using a familiar two-wire (I2C) protocol. Both  
devices incorporate a read-only Device ID that allows  
the host to determine the manufacturer, product  
density, and product revision. The devices are  
guaranteed over an industrial temperature range of -  
40°C to +85°C.  
Description  
The FM24V05 is a 512Kbit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
Pin Configuration  
The FM24V05 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
A2  
SCL  
SDA  
VSS  
Pin Name  
A0-A2  
SDA  
SCL  
WP  
Function  
These capabilities make the FM24V05 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Supply Voltage  
Ground  
VDD  
VSS  
The FM24V05 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
This product conforms to specifications per the terms of the Ramtron standard warranty. The product has completed Ramtron’s  
internal qualification testing and has reached production status.  
Cypress Semiconductor Corporation  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Document Number: 001-84462 Rev. *B  
Revised May 29, 2013  

FM24V05-GTR 替代型号

型号 品牌 替代类型 描述 数据表
FM24V01-GTR CYPRESS

完全替代

128Kb Serial 3V F-RAM Memory
FM24V01-G CYPRESS

完全替代

128Kb Serial 3V F-RAM Memory
FM24V02-G CYPRESS

类似代替

256Kb Serial 3V F-RAM Memory

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Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8