Datasheet > FM24VN01-GTR

FM24VN01-GTR

更新时间： 2024-02-12 12:11:45

品牌	Logo	应用领域
铁电 - RAMTRON		光电二极管内存集成电路
页数	文件大小	规格书
16页	334K
描述
Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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技术参数
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FM24VN01-GTR 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SOP,	针数：	8
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.84	JESD-30 代码：	R-PDSO-G8
长度：	4.9 mm	内存密度：	131072 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	8
功能数量：	1	端子数量：	8
字数：	16384 words	字数代码：	16000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	16KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	座面最大高度：	1.75 mm
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	3.9 mm
Base Number Matches：	1

FM24VN01-GTR 数据手册

Preliminary

FM24V01

128Kb Serial 3V F-RAM Memory

Features

128K bit Ferroelectric Nonvolatile RAM

Device ID and Serial Number

•

Device ID reads out Manufacturer ID & Part ID

Unique Serial Number (FM24VN01)

•

Organized as 16,384 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

•

Low Voltage Operation 2.0V – 3.6V

Active Current 90 µA (typ. @ 100KHz

80 µA Standby Current (typ.)

)

Fast Two-wire Serial Interface

4 µA Sleep Mode Current (typ.)

•

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

8-pin “Green”/RoHS SOIC Package

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. The

FM24VN01 is offered with a unique serial number

that is read-only and can be used to identify a board

or system. Both devices incorporate a read-only

Device ID that allows the host to determine the

manufacturer, product density, and product revision.

The devices are guaranteed over an industrial

temperature range of -40°C to +85°C.

Description

The FM24V01 is a 128Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V01 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

These capabilities make the FM24V01 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Pin Name

A0-A2

SDA

Function

Device Select Address

Serial Data/address

Serial Clock

SCL

VDD

VSS

Write Protect

Supply Voltage

Ground

The FM24V01 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

a hardware drop-in replacement. The devices are

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.0

May 2010

Page 1 of 16

12 3 4 5 6 7...16

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FM24VN02-G	CYPRESS	256Kb Serial 3V F-RAM Memory	获取价格
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FM24VN02-GTR	RAMTRON	256Kb Serial 3V F-RAM Memory	获取价格
FM24VN02-GTR	CYPRESS	256Kb Serial 3V F-RAM Memory	获取价格
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