Datasheet > FM24V10_10

FM24V10_10

更新时间： 2024-02-01 01:39:23

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
16页	341K
描述
1Mb Serial 3V F-RAM Memory

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中文翻译

获取价格

数据手册

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FM24V10_10 数据手册

Pre-Production

FM24V10

1Mb Serial 3V F-RAM Memory

Features

1M bit Ferroelectric Nonvolatile RAM

Device ID and Serial Number

•

Device ID reads out Manufacturer ID & Part ID

Unique Serial Number (FM24VN10)

•

Organized as 131,072 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

•

Low Voltage Operation 2.0V – 3.6V

Active Current < 150 µA (typ. @ 100KHz

90 µA Standby Current (typ.)

)

Fast Two-wire Serial Interface

5 µA Sleep Mode Current (typ.)

•

Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

8-pin “Green”/RoHS SOIC Package

available in industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. The

FM24VN10 is offered with a unique serial number

that is read-only and can be used to identify a board

or system. Both devices incorporate a read-only

Device ID that allows the host to determine the

manufacturer, product density, and product revision.

The devices are guaranteed over an industrial

temperature range of -40°C to +85°C.

Description

The FM24V10 is a 1-megabit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V10 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

These capabilities make the FM24V10 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

Pin Name

A1, A2

SDA

Function

Device Select Address

Serial Data/address

Serial Clock

SCL

VDD

VSS

Write Protect

Supply Voltage

Ground

The FM24V10 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

a hardware drop-in replacement. The devices are

This is a product in the pre-production phase of development. Device

characterization is complete and Ramtron does not expect to change the

specifications. Ramtron will issue a Product Change Notice if any

specification changes are made.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 2.0

May 2010

Page 1 of 16

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中文翻译

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与FM24V10_10相关器件

型号	品牌	获取价格	描述	数据表
FM24V10_13	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V10-GTR	RAMTRON	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	CYPRESS	获取价格	1Mb Serial 3V F-RAM Memory
FM24V10-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24VN01-G	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24VN01-GTR	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24VN02-G	CYPRESS	获取价格	256Kb Serial 3V F-RAM Memory

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