5秒后页面跳转
FLL300IL-3 PDF预览

FLL300IL-3

更新时间: 2024-02-20 12:46:18
品牌 Logo 应用领域
EUDYNA 晶体晶体管放大器局域网
页数 文件大小 规格书
6页 124K
描述
L-Band Medium & High Power GaAs FET

FLL300IL-3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.13
其他特性:HIGH RELIABILITY外壳连接:SOURCE
配置:SINGLE最小漏源击穿电压:15 V
最大漏极电流 (ID):8 AFET 技术:JUNCTION
最高频带:L BANDJESD-30 代码:R-CDFM-F2
元件数量:1端子数量:2
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

FLL300IL-3 数据手册

 浏览型号FLL300IL-3的Datasheet PDF文件第1页浏览型号FLL300IL-3的Datasheet PDF文件第2页浏览型号FLL300IL-3的Datasheet PDF文件第3页浏览型号FLL300IL-3的Datasheet PDF文件第4页浏览型号FLL300IL-3的Datasheet PDF文件第5页 
FLL300IL-1, FLL300IL-2, FLL300IL-3  
L-Band Medium & High Power GaAs FET  
Case Style "IL"  
Metal-Ceramic Hermetic Package  
0.1  
(0.004)  
1
2
4
3
4-R 1.3±0.15  
2.4±0.15  
(0.094)  
(0.051)  
1.0  
(0.039)  
5.5 Max.  
(0.217)  
16.4  
(0.646)  
1. Gate  
2. Source (Flange)  
3. Drain  
4. Source (Flange)  
20.4±0.2  
(0.803)  
24±0.2  
(0.945)  
Unit: mm(inches)  
For further information please contact:  
FUJITSU COMPOUND SEMICONDUCTOR, INC.  
2355 Zanker Rd.  
CAUTION  
San Jose, CA 95131-1138, U.S.A.  
Phone: (408) 232-9500  
Fujitsu Compound Semiconductor Products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
FAX: (408) 428-9111  
www.fcsi.fujitsu.com  
• Do not put these products into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
FUJITSU MICROELECTRONICS, LTD.  
Compound Semiconductor Division  
Network House  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
Norreys Drive  
Maidenhead, Berkshire SL6 4FJ  
Phone:+44 (0)1628 504800  
FAX:+44 (0)1628 504888  
Fujitsu Limited reserves the right to change products and specifications without notice.  
The information does not convey any license under rights of Fujitsu Limited or others.  
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.  
Printed in U.S.A. FCSI0598M200  
6

与FLL300IL-3相关器件

型号 品牌 描述 获取价格 数据表
FLL300IP-2 FUJITSU RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction

获取价格

FLL300IP-4 FUJITSU RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction

获取价格

FLL310IQ-3 FUJITSU RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction

获取价格

FLL310IQ-3A EUDYNA High Voltage - High Power GaAs FET

获取价格

FLL351ME FUJITSU L-band medium & high power gaas FTEs

获取价格

FLL357ME EUDYNA L-Band Medium & High Power GaAs FET

获取价格