Datasheet > FJP13009_07

FJP13009_07

更新时间： 2024-11-10 03:36:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管高压
页数	文件大小	规格书
6页	132K
描述
High Voltage Fast-Switching NPN Power Transistor

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FJP13009_07 数据手册

March 2007

FJP13009

High Voltage Fast-Switching NPN Power Transistor

•

High Voltage Capability

High Switching Speed

Suitable for Electronic Ballast and Switching Mode Power Supply

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings*

= 25°C unless otherwise noted (notes_1)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

700

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

400

Collector Current (DC)

Collector Current (Pulse)

Base Current

I_CP

I_B

P_C

Collector Dissipation (T_C= 25°C)

Junction Temperature

Storage Temperature Range

100

150

-65 ~ 150

°C

T_J

T_STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES_1:

1) These ratings are based on a maximum junction temperature of 150°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Package Marking and Ordering Information

Device Item (notes_2)

FJP13009

Device Marking

J13009

Package

TO-220

Packing Method

Qty(pcs)

1,200

Bulk

TUBE

FJP13009H2TU

FJP13009TU

Notes_2 :

J130092

TO-220

1,000

J13009

TO-220

1,000

1) The Affix “-H2” means the hFE classification.

2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.

FJP13009 Rev. B

www.fairchildsemi.com

12 3 4 5 6

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