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FJP13009_07 PDF预览

FJP13009_07

更新时间: 2024-11-08 03:36:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管高压
页数 文件大小 规格书
6页 132K
描述
High Voltage Fast-Switching NPN Power Transistor

FJP13009_07 数据手册

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March 2007  
FJP13009  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Mode Power Supply  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted (notes_1)  
C
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
700  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
9
12  
V
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
A
ICP  
24  
A
IB  
6
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature Range  
100  
150  
-65 ~ 150  
W
°C  
°C  
TJ  
TSTG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES_1:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Package Marking and Ordering Information  
Device Item (notes_2)  
FJP13009  
Device Marking  
J13009  
Package  
TO-220  
Packing Method  
Qty(pcs)  
1,200  
Bulk  
TUBE  
TUBE  
FJP13009H2TU  
FJP13009TU  
Notes_2 :  
J130092  
TO-220  
1,000  
J13009  
TO-220  
1,000  
1) The Affix “-H2” means the hFE classification.  
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.  
©2007 Fairchild Semiconductor Corporation  
FJP13009 Rev. B  
1
www.fairchildsemi.com  

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