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FJNS7565 PDF预览

FJNS7565

更新时间: 2024-09-19 22:28:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管闪光灯电子
页数 文件大小 规格书
4页 93K
描述
For Output Amplifier of Electronic Flash Unit

FJNS7565 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
最大集电极电流 (IC):5 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):150
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):0.55 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

FJNS7565 数据手册

 浏览型号FJNS7565的Datasheet PDF文件第2页浏览型号FJNS7565的Datasheet PDF文件第3页浏览型号FJNS7565的Datasheet PDF文件第4页 
FJNS7565  
For Output Amplifier of Electronic Flash Unit  
Low Collector-Emitter Saturation Voltage  
High Performance at Low Supply Voltage  
TO-92Mini  
1.Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
15  
CBO  
10  
V
CEO  
EBO  
7
5
V
I
A
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
0.55  
W
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
15  
10  
7
Typ.  
Max.  
Units  
BV  
I
I
I
= 10µA, I = 0  
V
V
CBO  
CEO  
EBO  
C
C
C
E
BV  
BV  
= 1mA, I = 0  
B
= 10µA, I = 0  
V
C
I
I
V
V
= 15V, I = 0  
100  
100  
800  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
h
V
V
V
= 2V, I = 0.5A  
450  
300  
150  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= 2V, I = 2A  
C
= 2V, I = 5A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Output Capacitance  
I
I
= 3A, I = 60mA  
0.45  
1.5  
V
V
CE  
C
C
B
= 3A, I = 60mA  
BE  
B
C
V
= 20V, I = 0, f = 1MHz  
20  
pF  
ob  
CB  
E
©2003 Fairchild Semiconductor Corporation  
Rev. B, May 2003  

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