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FJNS7565TA PDF预览

FJNS7565TA

更新时间: 2024-09-20 21:16:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 89K
描述
Small Signal Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92MINI, 3 PIN

FJNS7565TA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):5 A集电极-发射极最大电压:10 V
配置:SINGLE最小直流电流增益 (hFE):150
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

FJNS7565TA 数据手册

 浏览型号FJNS7565TA的Datasheet PDF文件第2页浏览型号FJNS7565TA的Datasheet PDF文件第3页浏览型号FJNS7565TA的Datasheet PDF文件第4页 
FJNS7565  
For Output Amplifier of Electronic Flash Unit  
Low Collector-Emitter Saturation Voltage  
High Performance at Low Supply Voltage  
TO-92Mini  
1.Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
15  
CBO  
10  
V
CEO  
EBO  
7
5
V
I
A
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
0.55  
W
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter Base Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
15  
10  
7
Typ.  
Max.  
Units  
BV  
I
I
I
= 10µA, I = 0  
V
V
CBO  
CEO  
EBO  
C
C
C
E
BV  
BV  
= 1mA, I = 0  
B
= 10µA, I = 0  
V
C
I
I
V
V
= 15V, I = 0  
100  
100  
800  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
h
V
V
V
= 2V, I = 0.5A  
450  
300  
150  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= 2V, I = 2A  
C
= 2V, I = 5A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector Output Capacitance  
I
I
= 3A, I = 60mA  
0.45  
1.5  
V
V
CE  
C
C
B
= 3A, I = 60mA  
BE  
B
C
V
= 20V, I = 0, f = 1MHz  
20  
pF  
ob  
CB  
E
©2003 Fairchild Semiconductor Corporation  
Rev. B, May 2003  

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