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FGW40N120HD PDF预览

FGW40N120HD

更新时间： 2024-11-02 11:58:19
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
8页 680K
描述
Discrete IGBT (High-Speed V series) 1200V / 40A

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中文翻译

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FGW40N120HD 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW40N120HD  
Discrete IGBT (High-Speed V series)  
1200V / 40A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
Power coditionner  
Power factor correction circuit  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
V
CES  
1200  
±20  
70  
V
V
A
A
A
A
A
A
A
VGES  
I
I
I
C@25  
C@100  
CP  
T
T
C
C
=25°C,T  
j
=150°C  
DC Collector Current  
40  
=100°C,T=150°C  
j
Pulsed Collector Current  
120  
120  
52  
30  
120  
Note *1  
CE≤1200V,T≤175°C  
Turn-Off Safe Operating Area  
-
V
j
Gate  
I
I
I
F@25  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤600V,VGE=12V  
≤150°C  
Short Circuit Withstand Time  
t
SC  
5
µs  
T
j
Emitter  
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
Operating Junction Temperature  
Storage Temperature  
P
P
D_IGBT  
D_FWD  
340  
190  
-40 ~ +175  
-55 ~ +175  
T
TC  
C
=25°C  
W
=25°C  
T
j
°C  
°C  
Tstg  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Items  
Units  
min.  
1200  
typ.  
-
-
max.  
Collector-Emitter Breakdown Voltage  
Zero Gate Voltage Collector Current  
V
(BR)CES  
I
C
= 50μA, VGE = 0V  
CE = 1200V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
250  
2
V
µA  
mA  
nA  
V
T
T
j
j
=25°C  
=175°C  
-
-
-
I
CES  
V
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
-
200  
6.0  
2.34  
-
V
GE (th)  
CE = +20V, I  
C
= 40mA  
4.0  
5.0  
1.8  
2.3  
3000  
130  
100  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
VCE (sat)  
V
GE = +15V, I  
C
= 40A  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
V
CC = 600V  
Gate Charge  
Q
G
I
C
= 40A  
GE = 15V  
= 25°C  
CC = 600V  
= 40A  
-
300  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
35  
60  
315  
40  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
2.8  
L = 500μH  
mJ  
ns  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
1.8  
-
T
V
j
= 175°C  
CC = 600V  
= 40A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
35  
60  
350  
75  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
4.8  
L = 500μH  
mJ  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
3.0  
-
1
12345678

中文翻译

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