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FGW75N65W PDF预览

FGW75N65W

更新时间: 2024-11-18 15:19:27
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 638K
描述
Molded Package TO-247-P2

FGW75N65W 数据手册

 浏览型号FGW75N65W的Datasheet PDF文件第2页浏览型号FGW75N65W的Datasheet PDF文件第3页浏览型号FGW75N65W的Datasheet PDF文件第4页浏览型号FGW75N65W的Datasheet PDF文件第5页浏览型号FGW75N65W的Datasheet PDF文件第6页浏览型号FGW75N65W的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW75N65W  
Discrete IGBT (High-Speed W series)  
650V / 75A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings at T=25°C (unless otherwise specified)  
j
Items  
Symbols Characteristics Unit  
Remarks  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Transient Gate-Emitter Voltage  
V
CES  
650  
±20  
±30  
124  
75  
V
V
GES  
V
T
T
T
p
<1µs  
=25°C  
=100°C  
Note *1  
CE≤650V  
I
I
I
C@25  
C@100  
CP  
A
A
A
C
DC Collector Current  
C
Pulsed Collector Current  
Turn-Off Safe Operating Area  
Max. Power Dissipation  
300  
Gate  
V
-
300  
A
T
j
≤175°C  
=25°C  
P
D
520  
W
°C  
°C  
TC  
Operating Junction Temperature T  
j
-40 ~ +175  
-55 ~ +175  
Storage Temperature  
Tstg  
Emitter  
Note *1 : Pulse width limited by Tjmax  
.
Electrical characteristics at T= 25°C (unless otherwise specified) Static Characteristics  
j
Description  
Symbol  
Conditions  
min.  
-
-
-
typ.  
-
-
max.  
250  
2
200  
5.0  
2.20  
-
-
-
-
-
Unit  
µA  
mA  
nA  
V
T
T
j
j
=25°C  
=175°C  
Zero Gate Voltage Collector Current  
I
I
CES  
V
CE = 650V, VGE = 0V  
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
GES  
V
V
CE = 0V, VGE = ±20V  
-
V
GE (th)  
CE = 20V, I  
C
= 75mA  
= 75A  
3.0  
4.0  
1.80  
2.05  
2.10  
5300  
150  
120  
T
T
T
j
j
j
=25°C  
=125°C  
=175°C  
-
-
-
-
-
-
Collector-Emitter Saturation Voltage  
V
CE (sat)  
V
GE = 15V, I  
C
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
oes  
res  
pF  
nC  
f=1MHz  
V
CC = 520V  
= 75A  
Gate Charge  
Q
G
I
C
-
300  
-
V
GE = 15V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
34  
56  
-
-
-
-
-
-
-
-
-
-
-
-
Tj  
= 25°C, VCC = 400V  
= 37.5A, VGE = 15V  
r
ns  
mJ  
ns  
IC  
d(off)  
f
300  
110  
0.95  
1.2  
34  
56  
340  
94  
R = 10Ω  
G
Energy loss include “tail” and FWD reverse  
recovery.  
on  
off  
t
t
t
t
d(on)  
Tj  
= 150°C, VCC = 400V  
= 37.5A, VGE = 15V  
r
IC  
d(off)  
f
R = 10Ω  
G
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-On Energy  
Turn-Off Energy  
E
E
on  
off  
1.6  
1.2  
mJ  
8882  
SEPTEMBER 2016  
1

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