http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGW75N65W
Discrete IGBT (High-Speed W series)
650V / 75A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Maximum Ratings and Characteristics
Equivalent circuit
Collector
Absolute Maximum Ratings at T=25°C (unless otherwise specified)
j
Items
Symbols Characteristics Unit
Remarks
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage
V
CES
650
±20
±30
124
75
V
V
GES
V
T
T
T
p
<1µs
=25°C
=100°C
Note *1
CE≤650V
I
I
I
C@25
C@100
CP
A
A
A
C
DC Collector Current
C
Pulsed Collector Current
Turn-Off Safe Operating Area
Max. Power Dissipation
300
Gate
V
-
300
A
T
j
≤175°C
=25°C
P
D
520
W
°C
°C
TC
Operating Junction Temperature T
j
-40 ~ +175
-55 ~ +175
Storage Temperature
Tstg
Emitter
Note *1 : Pulse width limited by Tjmax
.
Electrical characteristics at T= 25°C (unless otherwise specified) Static Characteristics
j
Description
Symbol
Conditions
min.
-
-
-
typ.
-
-
max.
250
2
200
5.0
2.20
-
-
-
-
-
Unit
µA
mA
nA
V
T
T
j
j
=25°C
=175°C
Zero Gate Voltage Collector Current
I
I
CES
V
CE = 650V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
GES
V
V
CE = 0V, VGE = ±20V
-
V
GE (th)
CE = 20V, I
C
= 75mA
= 75A
3.0
4.0
1.80
2.05
2.10
5300
150
120
T
T
T
j
j
j
=25°C
=125°C
=175°C
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
V
CE (sat)
V
GE = 15V, I
C
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE=25V
GE=0V
oes
res
pF
nC
f=1MHz
V
CC = 520V
= 75A
Gate Charge
Q
G
I
C
-
300
-
V
GE = 15V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
34
56
-
-
-
-
-
-
-
-
-
-
-
-
Tj
= 25°C, VCC = 400V
= 37.5A, VGE = 15V
r
ns
mJ
ns
IC
d(off)
f
300
110
0.95
1.2
34
56
340
94
R = 10Ω
G
Energy loss include “tail” and FWD reverse
recovery.
on
off
t
t
t
t
d(on)
Tj
= 150°C, VCC = 400V
= 37.5A, VGE = 15V
r
IC
d(off)
f
R = 10Ω
G
Energy loss include “tail” and FWD reverse
recovery.
Turn-On Energy
Turn-Off Energy
E
E
on
off
1.6
1.2
mJ
8882
SEPTEMBER 2016
1