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FGW60N65WD PDF预览

FGW60N65WD

更新时间： 2024-09-14 17:01:31
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
9页 363K
描述
Molded Package

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FGW60N65WD 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW60N65WD  
Discrete IGBT (High-Speed W series)  
650V / 60A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Transient Gate-Emitter Voltage  
V
CES  
650  
±20  
±30  
83  
60  
240  
V
VGES  
V
T
T
T
p
<1µs  
=25°C  
=100°C  
Note *1  
CE≤650V  
I
I
I
C@25  
C@100  
CP  
A
A
A
C
C
DC Collector Current  
Pulsed Collector Current  
Turn-Off Safe Operating Area  
Gate  
V
T
-
240  
A
j
≤175°C  
I
I
I
P
P
F@25  
45  
30  
240  
405  
105  
A
A
A
W
W
°C  
°C  
Diode Forward Current  
F@100  
FP  
Diode Pulsed Current  
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
Note *1  
Emitter  
D_IGBT  
D_FWD  
T
T
C
=25°C  
=25°C  
C
Operating Junction Temperature T  
j
-40 ~ +175  
-55 ~ +175  
Storage Temperature  
T
stg  
Note *1 : Pulse width limited by Tjmax  
.
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Description  
Units  
min.  
typ.  
-
max.  
250  
T
T
j
j
=25°C  
=175°C  
-
-
-
µA  
mA  
nA  
V
Zero Gate Voltage Collector Current  
ICES  
VCE = 650V, VGE = 0V  
-
2
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
V
GES  
V
V
CE = 0V, VGE = ±20V  
-
200  
GE (th)  
CE = 20V, I  
C
= 60mA  
= 60A  
3.0  
4.0  
1.80  
2.05  
2.10  
4300  
125  
95  
5.0  
Tj  
Tj  
Tj  
=25°C  
=125°C  
=175°C  
-
-
-
-
-
-
2.20  
Collector-Emitter Saturation Voltage  
V
CE (sat)  
VGE = 15V, I  
C
-
-
-
-
-
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
oes  
res  
pF  
nC  
f=1MHz  
VCC = 520V  
Gate Charge  
Q
G
I
C
= 60A  
-
250  
-
VGE = 15V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
29  
40  
260  
78  
0.60  
0.67  
29  
40  
295  
68  
0.96  
0.73  
2.5  
1.9  
1.7  
75  
0.30  
105  
0.90  
-
-
-
-
-
-
-
-
-
T
j
= 25°C, VCC = 400V  
= 30A, VGE = 15V  
r
ns  
mJ  
ns  
IC  
d(off)  
f
R = 10Ω, L = 500μH  
Energy loss include “tail” and FWD reverse  
recovery.  
G
on  
off  
t
t
t
t
d(on)  
Tj  
= 150°C, VCC = 400V  
= 30A, VGE = 15V  
r
IC  
d(off)  
f
R = 10Ω, L = 500μH  
Energy loss include “tail” and FWD reverse  
recovery.  
G
-
-
-
Turn-On Energy  
Turn-Off Energy  
E
E
on  
off  
mJ  
Tj  
Tj  
Tj  
=25°C  
=125°C  
=175°C  
3.2  
-
-
-
-
V
V
V
ns  
μC  
ns  
μC  
Forward Voltage Drop  
V
F
IF  
=25A  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
t
rr  
V
-di  
V
-di  
CC=400V, I  
F
=30A  
=30A  
Q
rr  
F
/dt=500A/μs, T  
j
=25°C  
trr  
CC=400V, I  
F
-
-
Q
rr  
F
/dt=500A/μs, T  
j
=150°C  
8720a  
FEBRUARY 2016  
1
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