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FGW50N60H

更新时间： 2024-10-14 12:21:47
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
6页 645K
描述
Discrete IGBT (High-Speed V series) 600V / 50A

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中文翻译

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FGW50N60H 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW50N60H  
Discrete IGBT (High-Speed V series)  
600V / 50A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
Power coditionner  
Power factor correction circuit  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
600  
±20  
95  
50  
150  
150  
V
V
A
A
A
A
V
GES  
IC@25  
IC@100  
I
CP  
T
T
C
C
=25°C, T  
j
=150°C  
DC Collector Current  
=100°C, T  
j
=150°C  
Pulsed Collector Current  
Note *1  
Turn-Off Safe Operating Area  
-
V
V
CE≤600V, T  
j
≤175°C  
Gate  
CC≤300V, VGE=12V  
≤150°C  
=25°C  
Short Circuit Withstand Time  
Maximum Power Dissipation  
t
SC  
5
μs  
T
j
P
D
360  
W
°C  
°C  
TC  
Operating Junction Temperature T  
j
-40~+175  
-55~+175  
Storage Temperature  
Tstg  
Emitter  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Items  
Unit  
min.  
600  
typ.  
-
max.  
Collector-Emitter Breakdown Voltage  
Zero Gate Voltage Collector Current  
V
(BR)CES  
I
C
= 250μA, VGE = 0V  
CE = 600V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
250  
10  
200  
6.0  
1.95  
-
V
µA  
mA  
nA  
V
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
-
I
CES  
V
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
V
GE (th)  
CE = +20V, I  
C
= 50mA  
4.0  
5.0  
1.50  
1.80  
4320  
210  
160  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
VCE (sat)  
V
GE = +15V, I  
C
= 50A  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
V
CC = 400V  
Gate Charge  
Q
G
I
C
= 50A  
GE = 15V  
= 25°C  
CC = 400V  
= 50A  
-
305  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
35  
75  
310  
60  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
1.4  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW25S60L) reverse recovery.  
mJ  
ns  
Turn-Off Energy  
E
off  
-
1.7  
-
T
V
j
= 175°C  
CC = 400V  
= 50A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
40  
85  
335  
72  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
2.4  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW25S60L) reverse recovery.  
mJ  
Turn-Off Energy  
E
off  
-
2.2  
-
Thermal resistance  
Items  
Characteristics  
Symbols  
Conditions  
Unit  
min.  
typ.  
max.  
Thermal Resistance, Junction-Ambient  
Thermal Resistance Junction to Case  
R
R
th(j-a)  
th(j-c)  
-
-
-
-
50  
0.417  
°C/W  
1
123456

中文翻译

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