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FGW50XS65D PDF预览

FGW50XS65D

更新时间： 2024-04-09 19:03:27
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
8页 709K
描述
Molded Package TO-247-P2

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FGW50XS65D 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW50XS65D  
Discrete IGBT (XS-series)  
650V / 50A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)  
Equivalent circuit  
Parameter  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Symbol  
CES  
Value  
650  
± 20  
± 30  
77  
Unit  
V
Remarks  
② Collector  
V
V
GES  
V
Transient Gate-Emitter Voltage  
t < 1 μs  
= 25 °C  
= 100 °C  
Note *1  
CE ≤ 650 V  
vj ≤ 175 °C  
p
I
I
I
C@25  
A
A
A
T
T
C
DC Collector Current  
C@100  
CP  
50  
200  
C
Pulsed Collector Current  
Turn-Off Safe Operating Area  
①
Gate  
V
T
-
200  
A
①
②
I
I
I
P
P
F@25  
48  
30  
200  
290  
131  
A
A
A
W
W
°C  
°C  
③ Emitter  
③
Diode Forward Current  
F@100  
FP  
TO-247-P/TO-247-P2  
Diode Pulsed Current  
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
Operating Junction Temperature Tvj  
Note *1  
= 25 °C  
= 25 °C  
tot_IGBT  
tot_FWD  
T
T
C
C
-40 ~ +175  
-55 ~ +175  
Storage Temperature  
T
stg  
Note *1 : Pulse width limited by Tvj max  
.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)  
Parameter  
Symbol Conditions  
Zero Gate Voltage  
Min.  
-
-
Typ.  
-
-
Max.  
250  
2
Unit  
μA  
mA  
T
vj = 25 °C  
V
V
V
V
V
CE = 650 V  
I
CES  
Collector Current  
Gate-Emitter  
Leakage Current  
Gate-Emitter  
GE = 0 V  
CE = 0 V  
GE = ± 20 V  
CE = 20 V  
= 50 mA  
T
vj = 175 °C  
I
GES  
-
-
200  
4.6  
nA  
V
V
V
GE(th)  
3.4  
4.0  
Threshold Voltage  
I
C
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
-
-
-
-
-
-
1.35  
1.50  
1.60  
4100  
96  
1.70  
Collector-Emitter  
Saturation Voltage  
V
GE = 15 V  
= 50 A  
CE(sat)  
-
-
-
-
-
V
I
C
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE = 25 V  
GE = 0 V  
oes  
res  
pF  
nC  
f = 1 MHz  
42  
V
CC = 520 V  
= 50 A  
Gate Charge  
QG  
I
C
-
210  
-
VGE = 15 V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32  
34  
240  
20  
0.54  
0.38  
32  
32  
280  
21  
0.66  
0.50  
1.70  
1.78  
1.78  
62  
-
-
-
-
-
-
-
-
-
-
-
-
T
V
vj= 25 °C  
CC = 400 V  
= 25 A  
r
ns  
mJ  
ns  
d(off)  
f
I
C
V
GE = 15 V  
R
G
= 10 Ω  
on  
off  
Energy loss include “tail” and FWD reverse recovery.  
t
t
t
t
d(on)  
Tvj = 150 °C  
r
V
CC = 400 V  
= 25 A  
GE = 15 V  
d(off)  
f
I
C
V
R
G
= 10 Ω  
Turn-On Energy  
Turn-Off Energy  
E
E
on  
off  
mJ  
Energy loss include “tail” and FWD reverse recovery.  
Tvj = 25 °C  
Tvj = 125 °C  
Tvj = 175 °C  
2.15  
V
V
V
Forward Voltage Drop  
V
F
IF  
= 30 A  
-
-
-
V
CC = 400 V  
= 15 A  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
trr  
ns  
I
F
-di /dt = 900 A/μs  
F
Q
rr  
-
-
-
0.50  
100  
-
-
-
µC  
ns  
Tvj = 25 °C  
V
CC = 400 V  
= 15 A  
trr  
I
F
-di  
F
/dt = 900 A/μs  
Q
rr  
1.30  
µC  
Tvj = 150 °C  
9343  
OCTOBER 2018  
1
12345678

中文翻译

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