http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGW50XS65D
Discrete IGBT (XS-series)
650V / 50A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tvj = 25 °C (unless otherwise specified)
Equivalent circuit
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Symbol
CES
Value
650
± 20
± 30
77
Unit
V
Remarks
② Collector
V
V
GES
V
Transient Gate-Emitter Voltage
t < 1 μs
= 25 °C
= 100 °C
Note *1
CE ≤ 650 V
vj ≤ 175 °C
p
I
I
I
C@25
A
A
A
T
T
C
DC Collector Current
C@100
CP
50
200
C
Pulsed Collector Current
Turn-Off Safe Operating Area
①
Gate
V
T
-
200
A
①
②
I
I
I
P
P
F@25
48
30
200
290
131
A
A
A
W
W
°C
°C
③ Emitter
③
Diode Forward Current
F@100
FP
TO-247-P/TO-247-P2
Diode Pulsed Current
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Operating Junction Temperature Tvj
Note *1
= 25 °C
= 25 °C
tot_IGBT
tot_FWD
T
T
C
C
-40 ~ +175
-55 ~ +175
Storage Temperature
T
stg
Note *1 : Pulse width limited by Tvj max
.
Electrical Characteristics at Tvj = 25 °C (unless otherwise specified)
Parameter
Symbol Conditions
Zero Gate Voltage
Min.
-
-
Typ.
-
-
Max.
250
2
Unit
μA
mA
T
vj = 25 °C
V
V
V
V
V
CE = 650 V
I
CES
Collector Current
Gate-Emitter
Leakage Current
Gate-Emitter
GE = 0 V
CE = 0 V
GE = ± 20 V
CE = 20 V
= 50 mA
T
vj = 175 °C
I
GES
-
-
200
4.6
nA
V
V
V
GE(th)
3.4
4.0
Threshold Voltage
I
C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
-
-
-
-
-
-
1.35
1.50
1.60
4100
96
1.70
Collector-Emitter
Saturation Voltage
V
GE = 15 V
= 50 A
CE(sat)
-
-
-
-
-
V
I
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE = 25 V
GE = 0 V
oes
res
pF
nC
f = 1 MHz
42
V
CC = 520 V
= 50 A
Gate Charge
QG
I
C
-
210
-
VGE = 15 V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
32
34
240
20
0.54
0.38
32
32
280
21
0.66
0.50
1.70
1.78
1.78
62
-
-
-
-
-
-
-
-
-
-
-
-
T
V
vj= 25 °C
CC = 400 V
= 25 A
r
ns
mJ
ns
d(off)
f
I
C
V
GE = 15 V
R
G
= 10 Ω
on
off
Energy loss include “tail” and FWD reverse recovery.
t
t
t
t
d(on)
Tvj = 150 °C
r
V
CC = 400 V
= 25 A
GE = 15 V
d(off)
f
I
C
V
R
G
= 10 Ω
Turn-On Energy
Turn-Off Energy
E
E
on
off
mJ
Energy loss include “tail” and FWD reverse recovery.
Tvj = 25 °C
Tvj = 125 °C
Tvj = 175 °C
2.15
V
V
V
Forward Voltage Drop
V
F
IF
= 30 A
-
-
-
V
CC = 400 V
= 15 A
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
trr
ns
I
F
-di /dt = 900 A/μs
F
Q
rr
-
-
-
0.50
100
-
-
-
µC
ns
Tvj = 25 °C
V
CC = 400 V
= 15 A
trr
I
F
-di
F
/dt = 900 A/μs
Q
rr
1.30
µC
Tvj = 150 °C
9343
OCTOBER 2018
1