5秒后页面跳转
FGW60N65W PDF预览

FGW60N65W

更新时间: 2024-09-14 15:19:07
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
7页 641K
描述
Molded Package

FGW60N65W 数据手册

 浏览型号FGW60N65W的Datasheet PDF文件第2页浏览型号FGW60N65W的Datasheet PDF文件第3页浏览型号FGW60N65W的Datasheet PDF文件第4页浏览型号FGW60N65W的Datasheet PDF文件第5页浏览型号FGW60N65W的Datasheet PDF文件第6页浏览型号FGW60N65W的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW60N65W  
Discrete IGBT (High-Speed W series)  
650V / 60A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter Voltage  
Gate-Emitter Voltage  
Transient Gate-Emitter Voltage  
V
CES  
650  
±20  
±30  
83  
60  
240  
V
V
GES  
V
T
T
T
p
<1µs  
=25°C  
=100°C  
Note *1  
CE≤650V  
I
I
I
C@25  
C@100  
CP  
A
A
A
C
DC Collector Current  
C
Pulsed Collector Current  
Turn-Off Safe Operating Area  
Max. Power Dissipation  
Gate  
V
-
240  
A
T
j
≤175°C  
=25°C  
P
D
405  
W
°C  
°C  
TC  
Operating Junction Temperature T  
j
-40 ~ +175  
-55 ~ +175  
Storage Temperature  
Tstg  
Emitter  
Note *1 : Pulse width limited by Tjmax  
.
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Description  
Units  
min.  
typ.  
-
max.  
250  
T
T
j
j
=25°C  
=175°C  
-
-
-
µA  
mA  
nA  
V
Zero Gate Voltage Collector Current  
I
CES  
V
CE = 650V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
2
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
-
200  
V
GE (th)  
CE = 20V, I  
C
= 60mA  
3.0  
4.0  
1.80  
2.05  
2.10  
4300  
125  
95  
5.0  
Tj  
Tj  
Tj  
=25°C  
=125°C  
=175°C  
-
-
-
-
-
-
2.20  
Collector-Emitter Saturation Voltage  
VCE (sat)  
V
GE = 15V, I  
C
= 60A  
-
-
-
-
-
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
oes  
res  
pF  
nC  
f=1MHz  
V
CC = 520V  
Gate Charge  
Q
G
I
C
= 60A  
-
250  
-
V
GE = 15V  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Turn-On Energy  
Turn-Off Energy  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
E
E
d(on)  
-
-
-
-
-
-
-
-
-
-
-
-
29  
40  
260  
78  
0.60  
0.67  
29  
40  
295  
68  
0.96  
0.73  
-
-
-
-
-
-
-
-
-
-
-
-
Tj  
= 25°C, VCC = 400V  
= 30A, VGE = 15V  
r
ns  
mJ  
ns  
IC  
d(off)  
f
R = 10Ω, L = 500μH  
Energy loss include “tail” and FWD  
(FGW60N65WD) reverse recovery.  
G
on  
off  
t
t
t
t
d(on)  
Tj  
= 150°C, VCC = 400V  
= 30A, VGE = 15V  
r
IC  
d(off)  
f
R = 10Ω, L = 500μH  
Energy loss include “tail” and FWD  
(FGW60N65WD) reverse recovery.  
G
Turn-On Energy  
Turn-Off Energy  
E
E
on  
off  
mJ  
Thermal resistance characteristics  
Items  
Characteristics  
Symbols  
Conditions  
Units  
min.  
typ.  
max.  
Thermal Resistance, Junction-Ambient  
Thermal Resistance, Junction to Case  
R
R
th(j-a)  
th(j-c)  
-
-
-
-
-
-
50  
0.366  
°C/W  
8723a  
FEBRUARY 2016  
1

与FGW60N65W相关器件

型号 品牌 获取价格 描述 数据表
FGW60N65WD FUJI

获取价格

Molded Package
FGW60N65WE FUJI

获取价格

Molded Package TO-247-P2
FGW75N60H FUJI

获取价格

Discrete IGBT (High-Speed V series) 600V / 75A
FGW75N60HD FUJI

获取价格

Discrete IGBT (High-Speed V series) 600V / 75A
FGW75N65W FUJI

获取价格

Molded Package TO-247-P2
FGW75N65WE FUJI

获取价格

Molded Package TO-247-P2
FGW75XS120 FUJI

获取价格

Molded Package TO-247
FGW75XS120C FUJI

获取价格

Molded Package TO-247
FGW75XS65 FUJI

获取价格

Molded Package TO-247
FGW75XS65C FUJI

获取价格

Molded Package TO-247