http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGW60N65W
Discrete IGBT (High-Speed W series)
650V / 60A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Maximum Ratings and Characteristics
Equivalent circuit
Collector
Absolute Maximum Ratings (at T =25°C unless otherwise specified)
C
Items
Symbols Characteristics Units
Remarks
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage
V
CES
650
±20
±30
83
60
240
V
V
GES
V
T
T
T
p
<1µs
=25°C
=100°C
Note *1
CE≤650V
I
I
I
C@25
C@100
CP
A
A
A
C
DC Collector Current
C
Pulsed Collector Current
Turn-Off Safe Operating Area
Max. Power Dissipation
Gate
V
-
240
A
T
j
≤175°C
=25°C
P
D
405
W
°C
°C
TC
Operating Junction Temperature T
j
-40 ~ +175
-55 ~ +175
Storage Temperature
Tstg
Emitter
Note *1 : Pulse width limited by Tjmax
.
Electrical characteristics (at T
j
= 25°C unless otherwise specified)
Symbols Conditions
Characteristics
Description
Units
min.
typ.
-
max.
250
T
T
j
j
=25°C
=175°C
-
-
-
µA
mA
nA
V
Zero Gate Voltage Collector Current
I
CES
V
CE = 650V, VGE = 0V
CE = 0V, VGE = ±20V
-
2
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
I
GES
V
V
-
200
V
GE (th)
CE = 20V, I
C
= 60mA
3.0
4.0
1.80
2.05
2.10
4300
125
95
5.0
Tj
Tj
Tj
=25°C
=125°C
=175°C
-
-
-
-
-
-
2.20
Collector-Emitter Saturation Voltage
VCE (sat)
V
GE = 15V, I
C
= 60A
-
-
-
-
-
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE=25V
GE=0V
oes
res
pF
nC
f=1MHz
V
CC = 520V
Gate Charge
Q
G
I
C
= 60A
-
250
-
V
GE = 15V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
29
40
260
78
0.60
0.67
29
40
295
68
0.96
0.73
-
-
-
-
-
-
-
-
-
-
-
-
Tj
= 25°C, VCC = 400V
= 30A, VGE = 15V
r
ns
mJ
ns
IC
d(off)
f
R = 10Ω, L = 500μH
Energy loss include “tail” and FWD
(FGW60N65WD) reverse recovery.
G
on
off
t
t
t
t
d(on)
Tj
= 150°C, VCC = 400V
= 30A, VGE = 15V
r
IC
d(off)
f
R = 10Ω, L = 500μH
Energy loss include “tail” and FWD
(FGW60N65WD) reverse recovery.
G
Turn-On Energy
Turn-Off Energy
E
E
on
off
mJ
Thermal resistance characteristics
Items
Characteristics
Symbols
Conditions
Units
min.
typ.
max.
Thermal Resistance, Junction-Ambient
Thermal Resistance, Junction to Case
R
R
th(j-a)
th(j-c)
-
-
-
-
-
-
50
0.366
°C/W
8723a
FEBRUARY 2016
1