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FGW40N120WD PDF预览

FGW40N120WD

更新时间： 2024-11-03 17:01:35
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
9页 748K
描述
Molded Package TO-247-P

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FGW40N120WD 数据手册

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http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW40N120WD  
Discrete IGBT (High-Speed W series)  
1200V / 40A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
PV Power coditionner  
Inverter welding machine  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
1200  
±20  
65  
V
V
A
A
A
A
A
A
A
V
GES  
IC@25  
IC@100  
I
CP  
T
T
C
C
=25°C, T  
j
=150°C  
DC Collector Current  
40  
=100°C, T=150°C  
j
Pulsed Collector Current  
160  
160  
36  
20  
160  
Note *1  
CE≤1200V, T≤175°C  
Turn-Off Safe Operating Area  
-
V
j
Gate  
I
I
I
F@25  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤600V, VGE=15V  
≤150°C  
=25°C  
=25°C  
Short Circuit Withstand Time  
t
SC  
5
μs  
Emitter  
T
T
T
j
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
P
P
D_IGBT  
D_FWD  
430  
125  
C
C
W
Operating Junction Temperature T  
j
-40~+175  
-55~+175  
°C  
°C  
Storage Temperature  
Tstg  
Note *1 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Description  
Unit  
min.  
typ.  
-
max.  
250  
T
T
j
j
=25°C  
=175°C  
-
-
-
µA  
mA  
nA  
V
Zero Gate Voltage Collector Current  
I
CES  
V
CE = 1200V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
-
2
200  
7.0  
2.6  
-
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
V
GE (th)  
CE = 20V, I  
C
= 40mA  
5.0  
6.0  
2.0  
2.6  
2500  
110  
34  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
V
CE (sat)  
V
GE = 15V, I  
C
= 40A  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
V
CC = 400V  
Gate Charge  
Q
G
I
C
= 40A  
GE = 15V  
= 25°C  
CC = 600V  
= 40A  
-
120  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
32  
54  
178  
40  
-
-
-
-
-
r
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
2.8  
L = 500μH  
Energy loss include “tail” and FWD  
(FDRW20S120J) reverse recovery.  
mJ  
ns  
Turn-Off Energy  
E
off  
-
1.6  
-
T
V
j
= 150°C  
CC = 600V  
= 40A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
32  
48  
220  
56  
-
-
-
-
-
r
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
4.6  
L = 500μH  
mJ  
Energy loss include “tail” and FWD  
(FDRW20S120J) reverse recovery.  
Turn-Off Energy  
E
off  
-
2.4  
-
T
j
=25°C  
=175°C  
-
-
2.2  
1.8  
2.8  
-
V
V
Forward Voltage Drop  
V
F
IF=20A  
T
j
V
CC=30V  
= 3.0A  
Diode Reverse Recovery Time  
Diode Reverse Recovery Time  
t
rr1  
I
F
-
42  
-
ns  
-di/dt=200A/µs  
V
CC=600V  
t
rr2  
-
-
0.38  
0.95  
-
-
µs  
I
F
=20A  
-di /dt=200A/µs  
F
Diode Reverse Recovery Charge  
Q
rr  
µC  
Tj  
=25°C  
8564a  
JUNE 2015  
1
1234567...9

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