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FGW75N60HD PDF预览

FGW75N60HD

更新时间： 2024-10-30 12:21:47
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
8页 639K
描述
Discrete IGBT (High-Speed V series) 600V / 75A

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FGW75N60HD 数据手册

 浏览型号FGW75N60HD的Datasheet PDF文件第2页浏览型号FGW75N60HD的Datasheet PDF文件第3页浏览型号FGW75N60HD的Datasheet PDF文件第4页浏览型号FGW75N60HD的Datasheet PDF文件第5页浏览型号FGW75N60HD的Datasheet PDF文件第6页浏览型号FGW75N60HD的Datasheet PDF文件第7页 
http://www.fujielectric.com/products/semiconductor/  
Discrete IGBT  
FGW75N60HD  
Discrete IGBT (High-Speed V series)  
600V / 75A  
Features  
Low power loss  
Low switching surge and noise  
High reliability, high ruggedness (RBSOA, SCSOA etc.)  
Applications  
Uninterruptible power supply  
Power coditionner  
Power factor correction circuit  
Maximum Ratings and Characteristics  
Equivalent circuit  
Collector  
Absolute Maximum Ratings (at T =25°C unless otherwise specified)  
C
Items  
Symbols Characteristics Units  
Remarks  
Collector-Emitter voltage  
Gate-Emitter voltage  
V
CES  
600  
±20  
V
V
V
GES  
T
C
=25°C, T  
Note *1  
=100°C, T  
Note *2  
CE≤600V, T  
j
=150°C  
=150°C  
≤175°C  
I
C@25  
100  
A
DC Collector Current  
I
I
C@100  
CP  
75  
225  
225  
60  
35  
225  
A
A
A
A
A
A
TC  
j
Pulsed Collector Current  
Turn-Off Safe Operating Area  
Gate  
-
V
j
I
I
I
F@25  
Note *1  
Diode Forward Current  
Diode Pulsed Current  
F@100  
FP  
Note *1  
V
CC≤300V, VGE=12V  
≤175°C  
=25°C  
Emitter  
Short Circuit Withstand Time  
t
SC  
5
μs  
T
T
T
j
IGBT Max. Power Dissipation  
FWD Max. Power Dissipation  
P
P
D_IGBT  
D_FWD  
500  
190  
C
W
C
=25°C  
Operating Junction Temperature T  
j
-40~+175  
-55~+175  
°C  
°C  
Storage Temperature  
Tstg  
Note *1 : Current value limited by bonding wire.  
Note *2 : Pulse width limited by Tjmax.  
Electrical characteristics (at T  
j
= 25°C unless otherwise specified)  
Symbols Conditions  
Characteristics  
Items  
Units  
min.  
600  
typ.  
-
max.  
Collector-Emitter Breakdown Voltage  
Zero Gate Voltage Collector Current  
V
(BR)CES  
I
C
= 250μA, VGE = 0V  
CE = 600V, VGE = 0V  
CE = 0V, VGE = ±20V  
-
250  
10  
200  
6.0  
1.95  
-
V
µA  
mA  
nA  
V
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
-
I
CES  
V
Gate-Emitter Leakage Current  
Gate-Emitter Threshold Voltage  
I
GES  
V
V
V
GE (th)  
CE = +20V, I  
C
= 75mA  
4.0  
5.0  
1.50  
1.80  
6150  
300  
240  
T
T
j
j
=25°C  
=175°C  
-
-
-
-
-
Collector-Emitter Saturation Voltage  
VCE (sat)  
V
GE = +15V, I  
C
= 75A  
V
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
C
C
C
ies  
V
V
CE=25V  
GE=0V  
-
-
-
oes  
res  
pF  
f=1MHz  
V
CC = 400V  
Gate Charge  
Q
G
I
C
= 75A  
GE = 15V  
= 25°C  
CC = 400V  
= 75A  
-
460  
-
nC  
ns  
V
T
V
I
V
j
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
45  
-
-
-
-
-
r
130  
450  
105  
3.0  
C
d(off)  
f
GE = 15V  
R
G
= 10Ω  
Turn-On Energy  
E
on  
L = 500μH  
mJ  
ns  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
4.2  
-
T
V
j
= 175°C  
CC = 400V  
= 75A  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
t
t
t
t
d(on)  
-
-
-
-
-
45  
-
-
-
-
-
r
130  
490  
120  
4.3  
I
C
d(off)  
f
VGE = 15V  
RG = 10Ω  
Turn-On Energy  
E
on  
L = 500μH  
mJ  
Energy loss include “tail” and FWD reverse  
recovery.  
Turn-Off Energy  
E
off  
-
4.8  
-
1
12345678

中文翻译

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