http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGW40N65WE
Discrete IGBT (High-Speed W series)
650V / 40A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
PV Power coditionner
Inverter welding machine
Maximum Ratings and Characteristics
Equivalent circuit
Collector
Absolute Maximum Ratings at T=25°C (unless otherwise specified)
j
Items
Symbols Characteristics Unit
Remarks
Collector-Emitter Voltage
Gate-Emitter Voltage
Transient Gate-Emitter Voltage
V
CES
650
±20
±30
56
40
160
V
VGES
V
T
T
T
p
<1µs
=25°C
=100°C
Note *1
CE≤650V
I
I
I
C@25
C@100
CP
A
A
A
C
C
DC Collector Current
Pulsed Collector Current
Turn-Off Safe Operating Area
Gate
V
T
-
160
A
j
≤175°C
I
I
I
P
P
F@25
61
40
160
260
155
A
A
A
W
W
°C
°C
Diode Forward Current
F@100
FP
Diode Pulsed Current
IGBT Max. Power Dissipation
FWD Max. Power Dissipation
Note *1
Emitter
D_IGBT
D_FWD
TC
=25°C
=25°C
TC
Operating Junction Temperature T
j
-40 ~ +175
-55 ~ +175
Storage Temperature
T
stg
Note *1 : Pulse width limited by Tjmax
.
Electrical characteristics at T= 25°C (unless otherwise specified) Static Characteristics
j
Description
Symbol
Conditions
min.
-
-
-
typ.
-
-
max.
250
2
200
5.0
2.20
-
-
-
-
-
Unit.
µA
mA
nA
T
T
j
j
=25°C
=175°C
Zero Gate Voltage Collector Current
I
I
CES
V
CE = 650V, VGE = 0V
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
GES
V
V
CE = 0V, VGE = ±20V
-
V
GE (th)
CE = 20V, I
C
= 40mA
= 40A
3.0
4.0
1.80
2.05
2.10
3000
85
V
Tj
Tj
Tj
=25°C
=125°C
=175°C
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
V
CE (sat)
VGE = 15V, I
C
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE=25V
GE=0V
oes
res
pF
nC
f=1MHz
64
VCC = 520V
Gate Charge
Q
G
I
C
= 40A
-
180
-
VGE = 15V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Energy
Turn-Off Energy
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
E
E
d(on)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
24
30
185
47
0.29
0.29
24
30
215
40
0.56
0.32
2.5
1.9
1.7
100
0.29
140
1.0
-
-
-
-
-
-
-
-
-
T
j
= 25°C, VCC = 400V
= 20A, VGE = 15V
r
ns
mJ
ns
IC
d(off)
f
R = 10Ω, L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
G
on
off
t
t
t
t
d(on)
Tj
= 150°C, VCC = 400V
= 20A, VGE = 15V
r
IC
d(off)
f
R = 10Ω, L = 500μH
Energy loss include “tail” and FWD reverse
recovery.
G
-
-
-
Turn-On Energy
Turn-Off Energy
E
E
on
off
mJ
Tj
Tj
Tj
=25°C
=125°C
=175°C
3.2
-
-
-
-
V
V
V
ns
μC
ns
μC
Forward Voltage Drop
V
F
IF
=40A
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
V
-di
V
-di
CC=400V, I
F
=20A
=20A
Q
rr
F
/dt=500A/μs, T
j
=25°C
trr
CC=400V, I
F
-
-
Q
rr
F
/dt=500A/μs, T
j
=150°C
8774a
SEPTEMBER 2016
1