http://www.fujielectric.com/products/semiconductor/
Discrete IGBT
FGW40N120H
Discrete IGBT (High-Speed V series)
1200V / 40A
Features
Low power loss
Low switching surge and noise
High reliability, high ruggedness (RBSOA, SCSOA etc.)
Applications
Uninterruptible power supply
Power coditionner
Power factor correction circuit
Maximum Ratings and Characteristics
Equivalent circuit
Collector
Absolute Maximum Ratings (at T =25°C unless otherwise specified)
C
Items
Symbols Characteristics Units
Remarks
Collector-Emitter Voltage
Gate-Emitter Voltage
V
CES
1200
±20
70
V
V
A
A
A
A
V
GES
IC@25
IC@100
I
CP
T
T
C
C
=25°C, T
j
=150°C
DC Collector Current
40
120
120
=100°C, T
j
=150°C
Pulsed Collector Current
Note *1
Turn-Off Safe Operating Area
-
V
V
CE≤1200V, T
j
≤175°C
Gate
CC≤600V, VGE=12V
≤150°C
=25°C
Short Circuit Withstand Time
Maximum Power Dissipation
t
SC
5
μs
T
j
P
D
340
W
°C
°C
TC
Operating Junction Temperature T
j
-40 ~ +175
-55 ~ +175
Storage Temperature
Tstg
Emitter
Note *1 : Pulse width limited by Tjmax.
Electrical characteristics (at T
j
= 25°C unless otherwise specified)
Symbols Conditions
Characteristics
Items
Units
min.
1200
typ.
-
-
max.
Collector-Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
V
(BR)CES
I
C
= 50μA, VGE = 0V
CE = 1200V, VGE = 0V
CE = 0V, VGE = ±20V
-
250
2
V
µA
mA
nA
V
T
T
j
j
=25°C
=175°C
-
-
-
I
CES
V
-
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
I
GES
V
V
-
200
6.0
2.34
-
V
GE (th)
CE = +20V, I
C
= 40mA
4.0
5.0
1.8
2.3
3000
130
100
T
T
j
j
=25°C
=175°C
-
-
-
-
-
Collector-Emitter Saturation Voltage
VCE (sat)
V
GE = +15V, I
C
= 40A
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
C
C
ies
V
V
CE=25V
GE=0V
-
-
-
oes
res
pF
f=1MHz
V
CC = 600V
Gate Charge
Q
G
I
C
= 40A
GE = 15V
= 25°C
CC = 600V
= 40A
-
300
-
nC
ns
V
T
V
I
V
j
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
d(on)
-
-
-
-
-
35
60
315
40
-
-
-
-
-
r
C
d(off)
f
GE = 15V
R
G
= 10Ω
Turn-On Energy
E
on
2.8
L = 500μH
Energy loss include “tail” and FWD
(FDRW30S120J) reverse recovery.
mJ
ns
Turn-Off Energy
E
off
-
1.8
-
T
V
j
= 175°C
CC = 600V
= 40A
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
t
t
t
d(on)
-
-
-
-
-
35
60
350
75
-
-
-
-
-
r
I
C
d(off)
f
VGE = 15V
RG = 10Ω
Turn-On Energy
E
on
4.8
L = 500μH
Energy loss include “tail” and FWD
(FDRW30S120J) reverse recovery.
mJ
Turn-Off Energy
E
off
-
3.0
-
Thermal resistance characteristics
Items
Characteristics
Symbols
Conditions
Units
min.
typ.
max.
Thermal Resistance, Junction-Ambient
Thermal Resistance, Junction to Case
R
R
th(j-a)
-
-
-
-
-
-
50
0.439
°C/W
th(j-c)_IGBT
1