FGA40N60UFDTU_NL

更新时间： 2024-09-18 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	578K
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中文翻译

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数据手册

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FGA40N60UFDTU_NL 数据手册

IGBT

FGA40N60UFD

Ultrafast IGBT

General Description

Features

Fairchild's UFD series of Insulated Gate Bipolar Transistors

(IGBTs) provides low conduction and switching losses.

The UFD series is designed for applications such as motor

control and general inverters where high speed switching is

a required feature.

•

High speed switching

Low saturation voltage : V

High input impedance

= 2.3 V @ I = 20A

CE(sat)

CO-PAK, IGBT with FRD : t = 50ns (typ.)

Applications

AC & DC motor controls, general purpose inverters, robotics, and servo controls.

TO-3P

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Description

FGA40N60UFD

Units

Collector-Emitter Voltage

600

± 20

CES

GES

Gate-Emitter Voltage

Collector Current

@ T

25°C

Collector Current

@ T = 100°C

Pulsed Collector Current

160

CM (1)

Diode Continuous Forward Current

Diode Maximum Forward Current

Maximum Power Dissipation

Operating Junction Temperature

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from Case for 5 Seconds

@ T = 100°C

160

@ T

25°C

160

°C

@ T = 100°C

-55 to +150

stg

300

°C

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Typ.

Max.

Units

°C/W

(IGBT)

0.77

1.7

θJC

θJA

(DIODE)

Thermal Resistance, Junction-to-Ambient

FGA40N60UFD Rev. A

12 3 4 5 6 7 8

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