Datasheet > FFSP0465A

FFSP0465A

更新时间： 2024-10-30 11:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	258K
描述
SiC 二极管，650V，4A，TO-220-2

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FFSP0465A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

4 A, 650 V, D1, TO-220-2L

ELECTRICAL CONNECTION

FFSP0465A

Description

1. Cathode

2. Anode

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Features

TO−220−2LD

CASE 340BB

• Max Junction Temperature 175°C

• Avalanche Rated 25 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

AXYYKK

FFSP

0465A

= Assembly Plant Code

XYY

FFSP0465A

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

February, 2023 − Rev. 5

FFSP0465A/D

12 3 4 5 6

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