5秒后页面跳转
捷配首页

Datasheet > FFSP1065B
FFSP1065B PDF预览

FFSP1065B

更新时间： 2024-10-30 11:15:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 260K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-220-2L

阅读下载

中文翻译

获取价格

FFSP1065B 数据手册

 浏览型号FFSP1065B的Datasheet PDF文件第2页浏览型号FFSP1065B的Datasheet PDF文件第3页浏览型号FFSP1065B的Datasheet PDF文件第4页浏览型号FFSP1065B的Datasheet PDF文件第5页浏览型号FFSP1065B的Datasheet PDF文件第6页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
10 A, 650 V, D2, TO-220-2L  
ELECTRICAL CONNECTION  
FFSP1065B  
1. Cathode  
2. Anode  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
1
2
Features  
TO−220−2LD  
• Max Junction Temperature 175°C  
• Avalanche Rated 49 mJ  
CASE 340BB  
• High Surge Current Capacity  
• Positive Temperature Coefficient  
• Ease of Paralleling  
MARKING DIAGRAM  
• No Reverse Recovery / No Forward Recovery  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
FFSP  
Applications  
• General Purpose  
• SMPS, Solar Inverter, UPS  
• Power Switching Circuit  
1065B  
AYWWZZ  
ABSOLUTE MAXIMUM RATINGS  
C
FFSP1065B  
A
Y
WW  
ZZ  
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Assembly Lot Code  
(T = 25°C, Unless otherwise specified)  
Symbol  
Parameter  
Value  
650  
49  
Unit  
V
V
Peak Repetitive Reverse Voltage  
Single Pulse Avalanche Energy (Note 1)  
Continuous Rectified Forward Current @  
RRM  
E
mJ  
A
AS  
I
F
10  
T
< 139°C  
C
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Continuous Rectified Forward Current @  
< 135°C  
11  
T
C
I
Non−Repetitive Peak  
650  
570  
45  
A
T
T
= 25°C, 10 ms  
= 150°C, 10 ms  
F, Max  
C
C
Forward Surge Current  
I
Non−Repetitive Forward Half−Sine Pulse,  
Surge Current  
A
F, SM  
t = 8.3 ms  
p
P
tot  
Power Dissipation  
T
T
= 25°C  
75  
12.5  
W
C
= 150°C  
C
T , T  
Operating and Storage Temperature Range  
−55 to +175  
J
STG  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. E of 49 mJ is based on starting T = 25°C, L = 0.5 mH, I = 14 A, V = 50 V.  
AS  
J
AS  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2023 − Rev. 1  
FFSP1065B/D  
 
123456

中文翻译

下载PDF

与FFSP1065B相关器件

型号 品牌 获取价格 描述 数据表
FFSP1065B-F085 ONSEMI

获取价格

 		汽车碳化硅 (SiC) 肖特基二极管，650 V
FFSP1265A ONSEMI

获取价格

 		Silicon Carbide (SiC) Schottky Diode – EliteS
FFSP15120A ONSEMI

获取价格

 		碳化硅肖特基二极管
FFSP1665A ONSEMI

获取价格

 		SiC 二极管，650V，16A，TO-220-2
FFSP20120A ONSEMI

获取价格

 		SiC 二极管，1200V，20A，TO-220-2
FFSP2065A ONSEMI

获取价格

 		SiC 二极管，650V，20A，TO-220-2
FFSP2065B ONSEMI

获取价格

 		Silicon Carbide (SiC) Schottky Diode – EliteS
FFSP2065BDN-F085 ONSEMI

获取价格

 		Silicon Carbide (SiC) Schottky Diode - EliteS
FFSP2065B-F085 ONSEMI

获取价格

 		汽车碳化硅 (SiC) 肖特基二极管，650 V
FFSP3065A ONSEMI

获取价格

 		碳化硅肖特基二极管

与FFSP1065B相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证