Datasheet > FFSP2065BDN-F085

FFSP2065BDN-F085

更新时间： 2024-02-15 11:23:15

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	296K
描述
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-220-3L

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FFSP2065BDN-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	compliant	Factory Lead Time：	43 weeks 1 day
风险等级：	1.56	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

FFSP2065BDN-F085 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

20 A, 650 V, D2, TO-220-3L

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FFSP2065BDN-F085

Anode

Cathode/

Case

Anode

Description

Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−220−3LD

CASE 340AT

Features

• Max Junction Temperature 175°C

• Avalanche Rated 49 mJ

MARKING DIAGRAM

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified

AXYYKK

FFSP

2065BDN

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters

This document contains information on a product under development. onsemi reserves

the right to change or discontinue this product without notice.

= Assembly Plant Code

XYY

FFSP2065BDN

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FFSP2065BDN−F085/D

February, 2023 − Rev. P2

12 3 4 5 6

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